Neural signal front-end amplifier in 45 nm technology

机译：45 nm技术的神经信号前端放大器

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, a front-end amplifier is designed in 45nm CMOS technology (previously designed in 180 nm technology) for recording neural signals. This amplifier consists of three stages ¿¿¿(1) a pre-amplifier with a feedback loop, (2) a current gain stage with adjustable gain, and (3) a tunable filter. The first stage is a current-mode pre-amplifier with feedback loop. The feedback loop is used to bypass dc-offset current generated at the electrode-tissue interface. Adjustable current-gain stage is the second stage which is used to adjust the gain of the amplifier by the application of digital signals. Tunable filter (third stage) adjusts the low-pass cut-off frequency for different neural signals. All the stages in the amplifier are current mode circuits. To convert the output current signal of the tunable filter into voltage signal a transimpedance amplifier is used. The measured maximum voltage gain of the amplifier is 72.5 db. The maximum current noise is 23pA/¿¿¿Hz, and the power consumption is 6¿¿w at 0.8V power supply.

机译：在本文中，前端放大器采用45nm CMOS技术（以前设计为180nm技术）设计，用于记录神经信号。该放大器由三级组成：（1）带有反馈环路的前置放大器，（2）具有可调增益的电流增益级，和（3）可调滤波器。第一级是具有反馈环路的电流模式前置放大器。反馈回路用于旁路在电极组织界面产生的直流偏置电流。可调电流增益级是第二级，用于通过应用数字信号来调整放大器的增益。可调滤波器（第三级）可针对不同的神经信号调整低通截止频率。放大器中的所有级均为电流模式电路。为了将可调滤波器的输出电流信号转换为电压信号，使用了跨阻放大器。测得的放大器最大电压增益为72.5 db。最大电流噪声为23pA /？Hz，在0.8V电源下的功耗为6？w。

著录项

来源
《2015 International Conference on Communication Networks》|2015年|223-227|共5页
会议地点 Gwalior(IN)
作者
Jainendra Tripathi; Ranjeet Singh Tomar; Shyam Akashe;
展开▼
作者单位

ECE Department, ITM University, Gwalior (MP), India;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Current-mode; Low power; front-end; low noise current density; offset current;

机译：电流模式;低功耗;前端;低噪声电流密度;失调电流;

相似文献

外文文献
中文文献
专利

1. A CMOS Power-Efficient Low-Noise Current-Mode Front-End Amplifier for Neural Signal Recording [J] . Wu C.-Y., Chen W.-M., Kuo L.-T. Biomedical Circuits and Systems, IEEE Transactions on . 2013,第2期

机译：用于神经信号记录的CMOS高效节能低噪声电流模式前端放大器
2. Advanced front-end processes for the 45 nm CMOS technology node [J] . E.J.H. Collart, S.B. Felch, H. Graoui, Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2004,第Dec期

机译：适用于45 nm CMOS技术节点的高级前端流程
3. A Low Noise Amplifier Suitable for Biomedical Recording Analog Front-End in 65 nm CMOS Technology [J] . Nagulapalli R., Hayatleh K., Barker S., Journal of Circuits, Systems, and Computers . 2019,第8期

机译：一种低噪声放大器，适用于生物医学记录65 nm CMOS技术中的模拟前端
4. Neural signal front-end amplifier in 45 nm technology [C] . Jainendra Tripathi, Ranjeet Singh Tomar, Shyam Akashe International Conference on Communication Networks . 2015

机译：45 nm技术中的神经信号前端放大器
5. Design, Fault Modeling and Testing Of a Fully Integrated Low Noise Amplifier (LNA) in 45 nm CMOS Technology for Inter and Intra-Chip Wireless Interconnects [D] . Shinde, Tanmay Vinay. 2018

机译：45 nm CMOS技术中全集成低噪声放大器（LNA）的设计，故障建模和测试，用于芯片间无线互连
6. Low-Cutoff Frequency Reduction in Neural Amplifiers: Analysis and Implementation in CMOS 65 nm [O] . Fereidoon Hashemi Noshahr, Morteza Nabavi, Benoit Gosselin, 2021

机译：神经放大器的低截止频率降低：CMOS 65 NM中的分析和实施
7. A Front-End Amplifier With Current Compensation Feedback Input Impedance Booster for Neural Signal Applications [O] . Zhijun Zhou 2020

机译：具有电流补偿反馈输入阻抗的前端放大器，用于神经信号应用

Neural signal front-end amplifier in 45 nm technology

摘要

著录项

相似文献

相关主题

期刊订阅