• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>2015 International Conference on Communication Networks >Design of low leakage CMOS based full wave bridge rectifier
【24h】

Design of low leakage CMOS based full wave bridge rectifier

机译：基于低泄漏CMOS的全波桥式整流器设计

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper a low leakage CMOS based full wave bridge rectifier is analyzed. MOS based bridge rectifier circuit is being proposed in this study instead of the conventional diode bridge rectifier circuit because of its less reverse leakage parameters, proper utilization of switching mechanism results in high efficiency and suitability for high frequency application. It finds applications in many modern electronic applications such as signal processing, conditioning, measurement and instrumentation. The reduction of leakage parameters is exceeded to the improved rectifier efficiency of the proposed circuit. After simulation and analysis of proposed circuit, the leakage power obtained for the proposed circuit has found 1.089 fW; the average power of the proposed circuit has found 1.76 ¿¿W. The efficiency of the proposed circuit has found 81.83% which explains an improvement as compared to that of the diode based bridge rectifier circuit. The design is simulated at 45nm technology.
机译：本文分析了一种基于低泄漏CMOS的全波桥式整流器。由于反向漏参数较少，本研究提出了一种基于MOS的桥式整流电路，而不是传统的二极管桥式整流电路，适当利用开关机制可以实现高效率和适用于高频应用。它可以在许多现代电子应用中找到应用，例如信号处理，调节，测量和仪器仪表。泄漏参数的减少超出了所提出电路的改进的整流器效率。经过对拟议电路的仿真分析，发现拟议电路的泄漏功率为1.089 fW。建议电路的平均功率为1.76W。提出的电路的效率为81.83％，与基于二极管的桥式整流器电路相比，这是一个改进。该设计以45nm技术进行仿真。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号