Dynamic performance of graphene field effect transistor with contact resistance

机译：具有接触电阻的石墨烯场效应晶体管的动态性能

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Here we report the impact of source/drain contact resistance on the dynamic characteristics of large area Graphene Field Effect Transistor (GFET). Although silicon has been the most widely used semiconductor in the channel of MOSFETs, it is approaching to its physical limits. On the other hand, graphene has been deeply studied as a potential alternative; however its zero band gap forbids the applicability in logic devices. Still GFETs have a great prospect in radio frequency (RF) and microwave devices mainly due to its excellent transport as well as structural properties. Here we found the contact resistance of realistic devices with Ti, Au, Pt, and Ni contact has a great impact on the transconductance as well as the cut-off frequency of the device. They are found to decrease by almost 60% when contact resistance goes to 750 Ω.

机译：在这里，我们报告了源极/漏极接触电阻对大面积石墨烯场效应晶体管（GFET）动态特性的影响。尽管硅已成为MOSFET通道中使用最广泛的半导体，但它已接近其物理极限。另一方面，石墨烯作为一种潜在的替代品已被深入研究。但是，其零带隙禁止在逻辑设备中应用。 GFET在射频（RF）和微波设备方面仍具有广阔的前景，这主要是由于其出色的传输性能和结构特性。在这里，我们发现具有Ti，Au，Pt和Ni接触的实际器件的接触电阻对器件的跨导以及截止频率有很大的影响。发现当接触电阻达到750Ω时，它们将降低近60％。

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来源
《2016 5th International Conference on Informatics, Electronics and Vision》|2016年|21-25|共5页
会议地点 Dhaka(BD)
作者
Md. Rasidul Islam; Md. Askarul Haque; Md. Fahim-Al-Fattah; Md. Nur Kutubul Alam; Md. Rafiqul Islam;
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作者单位

Department of Electrical and Electronic Engineering Khulna University of Engineering Technology, Khulna-9203, Bangladesh;

Department of Electrical and Electronic Engineering Khulna University of Engineering Technology, Khulna-9203, Bangladesh;

Department of Electrical and Electronic Engineering Khulna University of Engineering Technology, Khulna-9203, Bangladesh;

Department of Electrical and Electronic Engineering Khulna University of Engineering Technology, Khulna-9203, Bangladesh;

Department of Electrical and Electronic Engineering Khulna University of Engineering Technology, Khulna-9203, Bangladesh;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Contact resistance; Graphene; Transconductance; Cutoff frequency; Logic gates; Transistors; Resistance;

机译：接触电阻;石墨烯;跨导;截止频率;逻辑门;晶体管;电阻;

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专利

1. Impact of contact resistance on the performances of graphene field-effect transistor through analytical study [J] . Rasidul Islam, A. S. M. Zadid Shifat, Kong Liu, AIP Advances . 2021,第4期

机译：接触电阻对石墨烯场效应晶体管性能通过分析研究的影响
2. Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance [J] . Ji-Hyun Hur, Deok-kee Kim Journal of Applied Physics . 2017,第23期

机译：扶手椅石墨烯纳米带场效应晶体管潜在性能的理论研究：取决于沟道尺寸和接触电阻
3. High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts [J] . Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire, Nano letters . 2014,第6期

机译：高迁移率WSe2 p型和n型场效应晶体管与高掺杂石墨烯接触以实现低电阻接触
4. Dynamic performance of graphene field effect transistor with contact resistance [C] . Md. Rasidul Islam, Md. Askarul Haque, Md. Fahim-Al-Fattah, International Conference on Informatics, Electronics and Vision . 2016

机译：石墨烯场效应晶体管具有接触电阻的动态性能
5. Two-dimensional low-resistance contacts for high performance WSe2 and MoS2 transistors. [D] . Chuang, Hsun-Jen. 2016

机译：用于高性能WSe2和MoS2晶体管的二维低电阻触点。
6. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors [O] . Ling-Feng Mao, Huansheng Ning, Zong-Liang Huo, -1

机译：顶部栅极石墨烯场效应晶体管中金属石墨烯触点的栅极控制肖特基势垒降低的物理模型
7. Impact of contact resistance on the performances of graphene field-effect transistor through analytical study [O] . Md. Rasidul Islam, A. S. M. Zadid Shifat, Kong Liu, 2021

机译：接触电阻对石墨烯场效应晶体管性能的影响通过分析研究
8. Studies by Near Edge X-ray Absorption Spectroscopies of Bonding Dynamics at the Graphene/Guanine Interface - A Proposal for High Mobility, Organic Graphene Field Effect Transistors. [R] . Campo, E. 2015

机译：石墨烯/鸟嘌呤界面粘接动力学近边缘X射线吸收光谱研究 - 高迁移率，有机石墨烯场效应晶体管的建议。

Dynamic performance of graphene field effect transistor with contact resistance

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