Comparative performance assessment of SiC and GaN power rectifier technologies

机译：SiC和GaN功率整流器技术的比较性能评估

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Silicon carbide and gallium nitride based Schottky and pin junction power rectifiers offer different performance trade-offs in terms of metrics such as forward voltage drop, switching energy loss and surge current capability. The goal of this paper is to identify the application space for different rectifier technologies. An analytical comparison between the performance of different power rectifier diodes for breakdown voltages ranging from 600V to over 8 kV is presented. It is shown that although GaN SBD offers some advantage over SiC diodes due to lower losses, low surge current capability of GaN may hinder its widespread adoption in applications.

机译：基于碳化硅和氮化镓的肖特基和针结功率整流器在正向压降，开关能量损耗和浪涌电流能力等指标方面提供了不同的性能折衷。本文的目的是确定不同整流技术的应用空间。给出了在600V至8kV以上的击穿电压下，不同功率整流二极管的性能之间的分析比较。结果表明，尽管GaN SBD由于损耗较低而相对于SiC二极管具有某些优势，但GaN的低浪涌电流能力可能会阻碍其在应用中的广泛采用。

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来源
《2016 COES annual conference proceedings》|2016年|1-5|共5页
会议地点 Blacksburg VA(US)
作者
Sauvik Chowdhury; T. Paul Chow;
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Center for Power Electronics SystemsDepartment of Electrical, Computer and System EngineeringRensselaer Polytechnic InstituteTroy, NY 12180 USA;

Center for Power Electronics SystemsDepartment of Electrical, Computer and System EngineeringRensselaer Polytechnic InstituteTroy, NY 12180 USA;

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Comparative performance assessment of SiC and GaN power rectifier technologies

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