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Extraction of Accurate SPICE Model for Commercial 1.2 kV SiC Module with Large Number of Paralleled Dice

机译：大量并联骰子的商用1.2 kV SiC模块精确SPICE模型的提取

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《2016 COES annual conference proceedings》|2016年|1-4|共4页
会议地点 Blacksburg VA(US)
作者
Zichen Miao; Yincan Mao; Woochan Kim; Khai Ngo;
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正文语种 eng
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1. Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup [J] . Shen Diao, Jun Sun, Ziwei Zhou, 纳米技术与精密工程（英文） . 2020,第004期
2. Design, Analysis, and Discussion of Short Circuit and Overload Gate-Driver Dual-Protection Scheme for 1.2-kV, 400-A SiC MOSFET Modules [J] . IEEE Transactions on Power Electronics . 2020,第3期

机译：1.2 kV，400 A SiC MOSFET模块的短路和过载栅极驱动器双重保护方案的设计，分析和讨论
3. Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules [J] . Du H., Ceccarelli L., Iannuzzo F., Microelectronics & Reliability . 2019,第Sepa期

机译：短路事件对1.2kV / 20A SiC MOSFET电源模块的功率循环的影响
4. Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules [J] . H. Du, P.D. Reigosa, F. Iannuzzo, Microelectronics & Reliability . 2018,第SEPa期

机译：1.2 kV SiC MOSFET功率模块短路测试的退化指标研究
5. Extraction of Accurate SPICE Model for Commercial 1.2 kV SiC Module with Large Number of Paralleled Dice [C] . Zichen Miao, Yincan Mao, Woochan Kim, COES annual conference . 2016

机译：大量平行骰子的商业1.2 kV SIC模块精确香料模型提取
6. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

机译：1.2 kV 4H-SiC平面栅极功率MOSFET的设计，分析和优化，用于改进的高频切换
7. Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module [O] . Maosheng Zhang, Na Ren, Qing Guo, 2020

机译：1200V / 200A全SiC电源模块在开启瞬态时上侧和下侧开关的vgs特性的建模和分析
8. Comparative evaluation of a commercially available 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module [O] . Tiwari, Subhadra, Midtgård, Ole-Morten, Undeland, Tore Marvin 2016

机译：商用1.2kV siC mOsFET模块和1.2kV si IGBT模块的对比评估

Extraction of Accurate SPICE Model for Commercial 1.2 kV SiC Module with Large Number of Paralleled Dice

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