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首页> 外文会议>2016 IEEE Healthcare Innovation Point-Of-Care Technologies Conference >Characterization and application of a discrete quartz extended-gate ISFET for the assessment of tumor cell viability
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Characterization and application of a discrete quartz extended-gate ISFET for the assessment of tumor cell viability

机译：用于评估肿瘤细胞生存能力的分立石英扩展栅ISFET的表征和应用

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摘要

In this work we present a system designed for continuous assessment of tumor cell extracellular pH using a fabricated quartz extended-gate ion-sensitive field effect transistor (EGFET). The extended gate structure was fabricated by patterning gold on a quartz substrate creating a pseudo-reference electrode and sensor below a Si3N4 sensing membrane. Various electrode geometries and configurations were created and each pattern was characterized. A readout/data acquisition system was designed to convert the current output of the EGFET to a voltage that was recorded using a low-power single board computer, which performed a hard "reset" before every data acquisition interval. This setup was able to monitor the viability of SKBR3 mammary gland tumor cells treated with staurosporine. Over a span of 8 hours, the autonomous data acquisition system recorded a steady decrease in cell viability. Results were verified with periodic cell culture images. Future applications include design of an extended gate EGFET array, which allows for accurate monitoring of individual cell cultures.
机译：在这项工作中，我们介绍了一个系统，该系统使用制造的石英扩展栅离子敏感场效应晶体管（EGFET）连续评估肿瘤细胞的细胞外pH。扩展的栅极结构是通过在石英基板上构图金，从而在Si3N4传感膜下方创建伪参比电极和传感器而制成的。创建了各种电极几何形状和配置，并对每个图案进行了表征。设计了一个读取/数据采集系统，以将EGFET的电流输出转换为使用低功耗单板计算机记录的电压，该计算机在每个数据采集间隔之前进行一次硬“复位”。该设置能够监测用星形孢菌素处理的SKBR3乳腺肿瘤细胞的生存力。在8小时内，自主数据采集系统记录了细胞活力的稳定下降。用定期细胞培养图像验证结果。未来的应用包括扩展门EGFET阵列的设计，该阵列可以精确监控单个细胞的培养。

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