首页> 外文会议>2016 IEEE International Conference on High Voltage Engineering and Application >Optimization design of bushing of distribution switchgear equipment
【24h】

Optimization design of bushing of distribution switchgear equipment

机译:配电开关设备套管优化设计

获取原文
获取原文并翻译 | 示例

摘要

The compact design has become the development direction of power distribution switchgear equipment. As a key element of the power distribution switch, the electric field of high voltage bushing was concentrated. In order to enhance the overall reliability of the distribution switchgear, the insulation structure of the bushing needed to be optimized. This paper constructed the three-dimensional finite element model of a certain type of 10kV distribution switchgear. Simultaneously considered the uniform breakdown field strength and engineering breakdown field intensity of SF6, determined the upper and lower limit of control field are 8850V/mm, 6500 V/mm as 1 minute power frequency withstand voltage of 42kV. The dielectric parameters of the switchgear were tested, then the electric field distribution inside the switchgear was simulated in finite element method(FEM), found that electric field was concentrated in these regions which were the air gap between bushing and flange, air gap between bushing and box and air gap between the central conductor limit and porcelain. Filling with semi-conductive adhesive, increasing the chamfer radius of conductor limit and using semi-conductive coating were adopted respectively in switch insulation structure optimization. The electric field distribution after optimization was simulated in FEM, results showed that electric field intensity in the previous concentrated area has lowered than the control field, the overall insulation reliability of power distribution switchgear has improved.
机译:紧凑的设计已成为配电开关设备的发展方向。作为配电开关的关键元件,高压套管的电场被集中。为了提高配电开关设备的整体可靠性,需要优化套管的绝缘结构。本文构建了某类10kV配电开关柜的三维有限元模型。同时考虑SF6的均匀击穿场强和工程击穿场强,确定控制场的上限和下限为1kV工频耐压42kV,上限为8850V / mm,6500 V / mm。测试了开关设备的介电参数,然后用有限元法(FEM)模拟了开关设备内部的电场分布,发现电场集中在衬套和法兰之间的气隙,衬套之间的气隙等区域。盒子和中央导体极限与瓷器之间的气隙。在开关绝缘结构的优化中,分别采用填充半导电胶,增大导体极限的倒角半径和使用半导电涂层。用有限元法对优化后的电场分布进行了仿真,结果表明,前一个集中区的电场强度比控制场要低,配电开关柜的整体绝缘可靠性得到了提高。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号