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Signal and image processing techniques for VLSI failure analysis

机译:用于VLSI故障分析的信号和图像处理技术

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For VLSI, internal electrical measurements are key steps to solve design debug issues and to perform failure analysis. Due to multiple metal layers, active areas of the chip are only accessible from the backside of the die. The ability of optical contactless techniques to operate through the silicon substrate and the few sample preparation required have widely contributed to promote them as unavoidable tools of the defect localization workflow. Timing issue or unusual consumption can be detected by static and dynamic photon emission analysis and Electro Optical Probing. The identification of the emission spots is an essential step of the process. Due to scaling, more and more emission nodes are located within the acquisition area so that large variations of emission intensity can exist and it is difficult to recover a signal with a good Signal to Noise Ratio (SNR). In this paper, automated techniques are reported to locate spots in these complex areas and to recover electrical waveforms with a good SNR. We will underline the challenge and define applications boundaries of these techniques. These techniques gives some perspectives for probing applications and allows FA community to use signal processing methods instead of expensive devices.
机译:对于VLSI,内部电气测量是解决设计调试问题和执行故障分析的关键步骤。由于存在多个金属层,因此只能从管芯的背面访问芯片的有源区域。非接触光学技术能够通过硅基板进行操作的能力以及所需的少量样品制备为促进它们成为缺陷定位工作流程中不可避免的工具做出了巨大贡献。定时问题或异常消耗可以通过静态和动态光子发射分析以及电光探测来检测。识别发射点是该过程的重要步骤。由于缩放,越来越多的发射节点位于采集区域内,因此发射强度可能存在较大变化,并且难以恢复具有良好信噪比(SNR)的信号。在本文中,报道了自动化技术来定位这些复杂区域中的斑点并恢复具有良好SNR的电波形。我们将强调挑战并定义这些技术的应用范围。这些技术为探测应用提供了一些前景,并允许FA社区使用信号处理方法来代替昂贵的设备。

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