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首页> 外文会议>2017 32nd Symposium on Microelectronics Technology and Devices >Numerical simulation of stressmigration in interconnects with air-gap structures
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Numerical simulation of stressmigration in interconnects with air-gap structures

机译：气隙结构互连中应力迁移的数值模拟

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This work investigates the impact of the dielectric material on the stressmigration based on modeling of 3D numerical simulations. Particularly noteworthy is the study for structures that incorporate so-called air-gaps. Contrary to the expected, the stress developed in the AG structure was larger than in the standard ones. The standard structure with SiCOH shows a magnitude of 450 MPa at the Cu/capping layer interface, while in the air-gap structure the magnitude is 550 MPa, an increase of 22 %. Nevertheless, the simulation results indicate that the introduction of air-gap technology does not affect the reliability of metallization from the point of view of stressmigration.
机译：这项工作基于3D数值模拟的模型，研究了介电材料对应力迁移的影响。特别值得一提的是对包含所谓气隙的结构的研究。与预期相反，AG结构中产生的应力大于标准结构中的应力。含SiCOH的标准结构在Cu /盖层界面处的强度为450 MPa，而在气隙结构中的强度为550 MPa，增加了22％。尽管如此，仿真结果表明，从应力迁移的角度来看，气隙技术的引入并不会影响金属化的可靠性。

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