Electro-optical efficiency and slow axis far-field improvement of high power laser diode bars using epitaxy structure optimization

机译：利用外延结构优化提高大功率激光二极管棒的电光效率和慢轴远场

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The rapid growth of industrial laser market is driven by the advance of high power laser technology. These high power laser systems require ever more reliable laser sources with higher brightness and higher efficiency. In this report, experimental and simulation data for pump laser diode bars show that improvements in epitaxial design can result in an increase of peak wall plug efficiency from 56% to 59% whilst maintaining slow axis divergence <;8.5° at currents up to 300 A.

机译：大功率激光技术的发展带动了工业激光市场的快速增长。这些高功率激光系统需要更加可靠的激光源，并且需要更高的亮度和效率。在此报告中，泵浦激光二极管棒的实验和仿真数据表明，外延设计的改进可以使峰值壁塞效率从56％提高到59％，同时在电流下保持慢轴发散<; 8.5°高达300A。

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来源
《2017 IEEE High Power Diode Lasers and Systems Conference》|2017年|33-34|共2页
会议地点 Coventry(GB)
作者
Xiaohang Liu; Carlo Holly; Ching-Long Jiang; Yihan Xiong; Stewart McDougall; Konstantin;
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作者单位

Boucke, Hagen Zimer, Berthold Schmidt TRUMPF Photonics, Inc., 2601 Route 130 South, Cranbury, NJ 08512;

Boucke, Hagen Zimer, Berthold Schmidt TRUMPF Photonics, Inc., 2601 Route 130 South, Cranbury, NJ 08512;

Boucke, Hagen Zimer, Berthold Schmidt TRUMPF Photonics, Inc., 2601 Route 130 South, Cranbury, NJ 08512;

Boucke, Hagen Zimer, Berthold Schmidt TRUMPF Photonics, Inc., 2601 Route 130 South, Cranbury, NJ 08512;

Boucke, Hagen Zimer, Berthold Schmidt TRUMPF Photonics, Inc., 2601 Route 130 South, Cranbury, NJ 08512;

Boucke, Hagen Zimer, Berthold Schmidt TRUMPF Photonics, Inc., 2601 Route 130 South, Cranbury, NJ 08512;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Semiconductor lasers; Pump lasers; Laser excitation; Bars; Power lasers; Diode lasers; Epitaxial growth;

机译：半导体激光器;泵浦激光器;激光激发;棒;功率激光器;二极管激光器;外延生长;;

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1. Suppression of far-field blooming in high-power broad-area diode lasers by optimizing gain distribution [J] . Wang Tao, Wang Lijie, Shu Shili, Limnology and oceanography, methods . 2017,第7期

机译：通过优化增益分布，抑制高功率宽面积二极管激光器的远场开花
2. Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers [J] . Winterfeldt M., Crump P., Wenzel H., Journal of Applied Physics . 2014,第6期

机译：限制9xx nm高功率广域二极管激光器中慢轴光束质量的因素的实验研究
3. Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers [J] . M. Winterfeldt, P. Crump, H. Wenzel, Journal of Applied Physics . 2014,第6期

机译：限制9xx nm高功率广域二极管激光器中慢轴光束质量的因素的实验研究
4. Electro-optical efficiency and slow axis far-field improvement of high power laser diode bars using epitaxy structure optimization [C] . Xiaohang Liu, Carlo Holly, Ching-Long Jiang, IEEE High Power Diode Lasers and Systems Conference . 2017

机译：使用外延结构优化电光效率和慢轴远场改进高功率激光二极管条
5. Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes [D] . Kuritzky, Leah Yvonne. 2016

机译：高效蓝色LED和激光二极管的外延和设备设计
6. A Preliminary In Vitro Study on the Efficacy of High-Power Photodynamic Therapy (HLLT): Comparison between Pulsed Diode Lasers and Superpulsed Diode Lasers and Impact of Hydrogen Peroxide with Controlled Stabilization [O] . Gianluigi Caccianiga, Marco Baldoni, Carlo Angelo Ghisalberti, 2006

机译：高功率光动力疗法（HLLT）功效的体外初步研究：脉冲二极管激光器和超脉冲二极管激光器之间的比较以及过氧化氢的受控稳定作用
7. Investigations on electro-optical and thermal performances degradation of high power density GaAs-based laser diode in vacuum environment [O] . Michaud, J., Pedroza, G., Béchou, L., 2015

机译：高功率密度GaAs基激光二极管在真空环境下电光和热性能退化的研究
8. Diode Laser Efficiency Increases Enable > 400-W Peak Power From 1-cm Bars and Show Clear Path to Peak Powers in Excess of 1-kW [R] . Crump, P. , Wang, J. , Patterson, S. , 2006

机译：<二极管激光效率提高使能> 1厘米棒的400W峰值功率，显示超过1千瓦的峰值功率的清晰路径

Electro-optical efficiency and slow axis far-field improvement of high power laser diode bars using epitaxy structure optimization

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