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首页> 外文会议>2017 IEEE International Conference on Antenna Innovations amp; Modern Technologies for Ground, Aircraft and Satellite Applications >Design and development of high power SP9T switch
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Design and development of high power SP9T switch

机译：大功率SP9T开关的设计与开发

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This paper presents design and development of High Power RF SP9T switch at L-Band for data link application. The design can withstand full reverse power under fault conditions. SP9T configuration is achieved through a two stage combination of SP3T switches. The design uses PIN diodes in tuned shunt configuration, one in 1st stage and two in 2nd stage to achieve high isolation. Shunt diode configuration along with λ/4 section of transmission line provides low Insertion Loss (IL).Design challenges and implementation schemes have been discussed. The Maximum insertion loss measured was 1.2 dB and isolation of 53 dB over the band of operation. Simulation and measured results are in good agreement. The switch is used in Electronic beam switching antenna for data link communication.
机译：本文介绍了用于数据链路应用的L波段大功率RF SP9T开关的设计和开发。该设计可在故障条件下承受全部反向功率。 SP9T配置通过SP3T开关的两级组合来实现。该设计在调谐并联配置中使用PIN二极管，第一级一个，第二级两个，以实现高隔离度。并联二极管配置与传输线的λ/ 4部分一起提供了低插入损耗（IL）。讨论了设计挑战和实现方案。测得的最大插入损耗为1.2 dB，在整个工作频段内的隔离度为53 dB。仿真和测量结果吻合良好。该开关用于电子束交换天线中，用于数据链路通信。

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