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首页> 外文会议>2018 76th Device Research Conference >First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic Doping
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First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic Doping

机译：静电掺杂可调节噪声容限的WSe2 CMOS反相器的首次演示

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Transition metal dichalcogenides (TMDs) as a family of 2D materials have received considerable attention due to their outstanding physical properties. Semiconducting TMDs with sizable bandgaps are especially appealing in quest of potential silicon alternatives. A complementary metal oxide semiconductor (CMOS) based inverter consisting of a p-type and an n-type field effect transistor (FET) is a fundamental unit for the logic elements of a circuit. WSen2nFETs provide us a platform to achieve CMOS without intentional chemical doping due to the availability of both electron and hole transport. Here we demonstrate for the first time a WSen2nCMOS inverter with modulable noise margin (NM), full logic swing, and high voltage gain by a novel gating scheme. Compared to existing demonstrations of WSen2n-based inverters [1]–[4] utilizing Schottky-barrier type devices, we deliver a genuine CMOS with n/i and p/i/p electrostatic doping profiles for the n/p-FET, respectively. Furthermore, We explore the significance of having devices with matched threshold voltages (Vnthn) to achieve optimal NM for high and low input states (n$mathrm{NM}_{mathrm{H}}$nandn$mathrm{NM}_{mathrm{L}}$n), which is essential to realize advanced circuit implementations.
机译：过渡金属二卤化物（TMD）作为二维材料家族，由于其出色的物理性能而受到了广泛的关注。在寻求潜在的硅替代品时，具有相当大的带隙的半导体TMD特别有吸引力。由p型和n型场效应晶体管（FET）组成的基于互补金属氧化物半导体（CMOS）的反相器是电路逻辑元件的基本单元。 WSen 2 nFET由于电子和空穴传输的可用性，为我们提供了一个无需进行化学掺杂即可实现CMOS的平台。在这里，我们首次展示了WSen 2 nCMOS反相器，具有新颖的门控方案，具有可调节的噪声容限（NM），完整的逻辑摆幅和高电压增益。与WSen 2 基于肖特基势垒型器件的基于n的逆变器[1] – [4]，我们为n / p-FET提供了具有n / i / n和p / i / p静电掺杂特性的真正CMOS，分别。此外，我们探索了具有匹配阈值电压（Vn 第 n次）来实现针对高输入状态和低输入状态的最佳NM（n $ mathrm {NM} _ {mathrm {H}} $ nandn $ mathrm {NM} _ {mathrm {L}} $ n） ，这对于实现高级电路实现至关重要。

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