• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>2018 76th Device Research Conference >Novel 2-D Materials for Tunneling FETs: an Ab-initio Study
【24h】

Novel 2-D Materials for Tunneling FETs: an Ab-initio Study

机译：隧道FET的新型二维材料：从头算研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An excellent electrostatic control has been early on identified as one of the most critical ingredients to build band- to- band tunneling field-effect transistors (TFETs) with a steep sub-threshold swing (SS) and a high ON-current (InONn) [1]. These essential features can be obtained by reducing the thickness of ultra-thin-body structures or the diameter of nanowires. Two-dimensional materials, especially their single-layer (SL) configuration, represent a promising alternative to conventional semiconductors due to their intrinsic sub-1nm thickness. Indeed, a TFET implementing an atomically thin MoSn2nchannel combined with a Ge layer was recently shown to exhibit a less than 60 mV/dec SS over several orders of magnitude and a decent InONn[2]. In this experiment, however, MoSn2nhad to be grouped with Ge to achieve the desired goal, thus raising the question whether 2-D materials alone can provide a suitable platform for high performance TFETs. Various theoretical studies based on empirical tight-binding models and focusing on SL transition metal dichalcogenides (TMDs) [3] and black phosphorus [4] have come to the conclusion that these compounds, in particular WTen2n, could deliver ON-currents larger thann$100 mumathrm{A}/mumathrm{m}$nat a supply voltagen$V_{DD}=0.5 mathrm{V}$nand OFF-currentn$I_{OFF}=1 mathrm{nA}/mumathrm{m}$n. Here, by employing an ab-initio quantum transport simulator, we will demonstrate that none of the usual TMDs reaches an$I_{ON} > > 10 mumathrm{A}/mumathrm{m}$n, contrary to recently discovered 2-D materials [5] that could pave the way for future, highly efficient TFETs.
机译：早期，优良的静电控制已被认为是构建具有陡峭亚阈值摆幅（SS）和高导通电流（In < inf xmlns：mml =“ http://www.w3.org/1998/Math/MathML” xmlns：xlink =“ http://www.w3.org/1999/xlink”>打开 n）[] 1]。通过减少超薄结构的厚度或纳米线的直径，可以获得这些基本特征。二维材料，尤其是其单层（SL）构造，由于其固有的1nm以下厚度，代表了传统半导体的有希望的替代品。实际上，TFET实现了原子上薄的MoSn 2 n通道结合了Ge层，最近显示出在几个数量级上具有小于60 mV / dec的SS，并具有不错的In 打开 n [2]。但是，在此实验中，MoSn 必须将2与In分组，以实现所需的目标，因此提出了这样一个问题：仅二维材料是否可以为高性能TFET提供合适的平台。各种基于经验紧密结合模型并关注SL过渡金属二硫化碳（TMDs）[3]和黑磷[4]的理论研究得出的结论是，这些化合物，特别是WTen 2 n，可以提供大于n $ 100 mumathrm {A} / mumathrm {m } $ 获得电源电压n $ V_ {DD} = 0.5 mathrm {V} $ n和OFF-currentn $I_{OFF}=1 mathrm {nA} / mumathrm {m} $ n。在这里，通过使用ab-initio量子传输模拟器，我们将证明没有一个普通的TMD到达$I_{ON}>> 10 mumathrm {A} / mumathrm {m} $ n，与最近发现的二维材料相反[5 ]可以为未来的高效TFET铺平道路。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号