Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory

机译：利用基于H的MONOS非易失性存储器进行多级2位/单元操作

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摘要

Metal-oxide-nitride-oxide-silicon (MONOS) type memory is a promising candidate to replace the conventional floating-gate (FG) type nonvolatile memory (NVM) [1]. Furthermore, the multi-level 2-bit/cell operation is necessary to realize for the high integration flash memory [2]. We have reported the excellent electrical characteristics of fully in-situ formed Hf-based MONOS NVM, which was able to be injected electron from sourceldrain region when NVM was operated by 6 V/2 ms [3]–[5]. In this study, multi-level 2-bit/cell operation of Hf-based MONOS NVM was investigated.

机译：金属氧化物-氮化物-氧化物-硅（MONOS）型存储器有望取代常规的浮栅（FG）型非易失性存储器（NVM）[1]。此外，要实现高集成度闪存[2]，必须进行多级2位/单元操作。我们已经报道了完全原位形成的基于H的MONOS NVM的出色的电气特性，当NVM以6 V / 2 ms的速度运行时，它能够从源极区注入电子[3] – [5]。在这项研究中，研究了基于H的MONOS NVM的多级2位/单元操作。

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来源
《2018 76th Device Research Conference》|2018年|1-2|共2页
会议地点 Santa Barbara(US)
作者
Sohya Kudoh; Shun-Ichiro Ohmi;
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作者单位

Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, J2-72 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan;

Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, J2-72 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan;

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正文语种 eng
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关键词
MONOS devices; Nonvolatile memory; Logic gates; Electrodes; Threshold voltage; Ion implantation;

机译：MONOS设备;非易失性存储器;逻辑门;电极;阈值电压;离子注入;;

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专利

1. Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped- select-gate (WSG) SONOS memory [J] . Woei-Cherng Wu, Tien-Sheng Chao, Wu-Chin Peng, Semiconductor science and technology . 2008,第1期

机译：优化的ONO厚度，用于多层选择门（WSG）SONOS存储器的多级和2位/单元操作
2. A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layer [J] . 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2019,第239期

机译：利用HFON隧道层的HF基于MONOS非易失性存储器特性的EOT缩放研究
3. Electron Spin Resonance and Photoluminescence Study of Charge Trap Centers in Silicon Nitride Films and Fabrication of Proposed Oxide-Nitride-Oxide Sidewall 2-bit/Cell Nonvolatile Memories [J] . Atsushi Toki, Noriaki Shinohara, Yoshiaki Kamigaki, Japanese journal of applied physics . 2008,第4issue2期

机译：氮化硅膜中电荷陷阱中心的电子自旋共振和光致发光研究以及建议的氧化物-氮化物-氧化物侧壁2位/单元非易失性存储器的制造
4. Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory [C] . Sohya Kudoh, Shun-Ichiro Ohmi Device Research Conference . 2018

机译：利用基于HF的Monos非易失性存储器的多级2位/单元格操作
5. Physics, technology and electrical aspects of scaled MONOS/SONOS devices for low voltage nonvolatile semiconductor memories (NVSMs). [D] . Libsch, Frank Robert. 1989

机译：用于低压非易失性半导体存储器（NVSM）的MONOS / SONOS缩放设备的物理，技术和电气方面。
6. Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations [O] . Woo Young Kim, Hyeon-Don Kim, Teun-Teun Kim, -1

机译：用于非易失性存储器和可重新配置逻辑门操作的石墨烯-铁电元设备
7. In-situ formation of Hf-based MONOS structures for non-volatile memory applications [O] . Shun-ichiro Ohmi, Yeyuan Liu 2015

机译：用于非易失性存储器应用的基于HF的Monos结构的原位形成

Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory

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