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首页> 外文会议>2nd International EUSPEN Conference on Precision Engineering Nanotechnology Vol.1, May 27th-31st, 2001, Turin, Italy >Plasma enhanced chemical vapour deposition of patterned CN_x films consisting of feathered nanotubes
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Plasma enhanced chemical vapour deposition of patterned CN_x films consisting of feathered nanotubes

机译：等离子增强化学气相沉积的图案化CN_x膜，由羽毛状纳米管组成

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摘要

Patterned films of decorated CNx nanotubes were catalytically synthesised using a plasma enhanced hot filament chemical vapour deposition method in a nitrogen/ methane/ammonia environment. To increase the content of nitrogen within the nanotubes, an additional thermal evaporation of nitrogen precursor compounds was installed in the deposition chamber. Such a simultaneous deposition from the hot filament and thermal evaporation allowed enhancing the overall amount of nitrogen up to 25% as derived from electron energy loss spectroscopy (EELS). A systematic study of the patterned areas by transmission electron microscopy (TEM) revealed that the films consist of twisted CN_x nanotubes decorated with feathered like structures. Such decoration was found to arise from the extension of graphene sheets grown perpendicular to the tube axis. High resolution microscopy showed crystalline but disordered graphite-like microstructures with highly buckled lattice fringes for these CN_x nanotubes. Raman spectroscopy confirmed a transition in the microscopic order as a function of deposition temperature. Field emission in vacuum showed a spectacular correlation between turn-on field and deposition temperature and therefore the diameter of the C:N tubes adjusted in a large range from 1 μm to 10 nm. For arrays of tubes thinner than 50 nm an onset field below 4 V/μm was observed.
机译：使用等离子增强热丝化学气相沉积法在氮气/甲烷/氨气环境下催化合成装饰的CNx纳米管的图案化膜。为了增加纳米管中氮的含量，在沉积室中安装了氮前体化合物的额外热蒸发。这样从热灯丝同时沉积和热蒸发可以使氮的总量增加多达25％，这可从电子能量损失谱（EELS）得出。通过透射电子显微镜（TEM）对图案区域的系统研究表明，这些薄膜由扭曲的CN_x纳米管组成，这些纳米管装饰有羽毛状结构。发现这种装饰源自垂直于管轴生长的石墨烯片的延伸。高分辨率显微镜显示了这些CN_x纳米管的晶体状但无序的石墨状微观结构，具有高度弯曲的晶格条纹。拉曼光谱证实了微观顺序随沉积温度的变化。真空中的场发射显示出导通场与沉积温度之间存在惊人的相关性，因此C：N管的直径可在1μm至10 nm的大范围内调节。对于小于50 nm的细管阵列，观察到低于4 V /μm的起始场。

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