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首页> 外文会议>2nd International EUSPEN Conference on Precision Engineering Nanotechnology Vol.1, May 27th-31st, 2001, Turin, Italy >Comparison of Laser Processes to Achieve Conductive Surface Areas on Ceramics
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Comparison of Laser Processes to Achieve Conductive Surface Areas on Ceramics

机译：在陶瓷上实现导电表面积的激光工艺比较

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摘要

Ceramics such as aluminium nitride (AIN) are nowadays used as substrate materials for electronic devices if a high thermal conductivity and electrical resistance is necessary. For metallisation of ceramic substrates, thick film or thin film techniques are the most commonly used methods. The direct writing of strip conductors with laser radiation can be considered as an alternative and complement to these technologies. With different laser sources like excimer, frequency converted Nd:YAG lasers and TEA CO_2 lasers, AIN can be thermally decomposed into aluminium and gaseous nitrogen. This aluminium can be used as a starting layer for an electroless plating process (Cu-Ni-Au). In this paper, the influences of process parameters like wavelength λ and pulse duration τ_H of the laser, the fluence H at the workpiece and the atmospheric environment during the activation of AIN are discussed with respect to the electrical conductivity and the electroless plating process.
机译：如果需要高导热率和高电阻，则如今将诸如氮化铝（AIN）之类的陶瓷用作电子设备的基板材料。对于陶瓷衬底的金属化，最常用的方法是厚膜或薄膜技术。可以考虑用激光辐射直接写入带状导体，作为对这些技术的替代和补充。通过使用不同的激光源（例如受激准分子，变频Nd：YAG激光和TEA CO_2激光），AIN可以热分解为铝和气态氮。这种铝可用作化学镀工艺（Cu-Ni-Au）的起始层。在本文中，从电导率和化学镀过程的角度，讨论了激光激活波长，波长和脉冲持续时间τ_H，工件上的注量H和大气环境等工艺参数的影响。

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