We studied ultra-shallow junctions (< 100 nm) obtained by ion implantation and two different annealing: conventional rapid and excimer laser annealing. Lateral diffusion of dopant was studied by a specific test pattern, fabricated by using electron beam lithography, with lateral dimension down to 32 nm. Two dimensional characterization of the ELA doped regions has been performed by TEM observations on samples chemically treated by a HF/HNO3 solution. We found that the vertical extension of doped region is related to melt depth induced by the laser irradiation, while the lateral spread is influenced by the capability of the masking material to adsorb the laser radiation.
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