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首页> 外文会议>3rd International Conference on High Temperature Capillarity HTC-2000, 3rd, Nov 19-22, 2000, Kurashiki, Japan >INTERFACIAL CHEMISTRY AND STRUCTURE OF Cu/Al_2O_3 INTERFACES
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INTERFACIAL CHEMISTRY AND STRUCTURE OF Cu/Al_2O_3 INTERFACES

机译：Cu / Al_2O_3界面的界面化学与结构

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摘要

A combined approach of high-resolution transmission electron microscopy and electron energy-loss near-edge structure studies was employed to determine the atomic structure and bonding mechanisms at Cu/α-Al_2O_3 interfaces in dependence of the Al_2O_3 substrate orientation. The investigated specimens were prepared by molecular beam epitaxy using ultra-high vacuum conditions, which led to atomically abrupt interfaces. The results show that intermetallic Cu-Al bonds occur at the investigated Cu/(1120)α-Al_2O_3 interface, while ionic-covalent bonding contributions are observed at the Cu/(0001)α-Al_2O_3 interface. The interfacial microstructure of diffusion-bonded Cu/(0001)α-Al_2O_3 samples was changed by annealing treatments under various oxygen partial pressures. The annealing resulted in the formation of a CuAlO_2 reaction phase at the interface between Cu and Al_2O_3.
机译：采用高分辨率透射电子显微镜和电子能量损失近边缘结构研究相结合的方法，根据Al_2O_3衬底的取向确定Cu /α-Al_2O_3界面的原子结构和键合机理。使用超高真空条件通过分子束外延制备了被研究的样品，这导致了原子的突然界面。结果表明，金属间Cu-Al键出现在所研究的Cu /（1120）α-Al_2O_3界面上，而离子共价键的贡献出现在Cu /（0001）α-Al_2O_3界面上。通过在各种氧分压下进行退火处理，改变了扩散结合的Cu /（0001）α-Al_2O_3样品的界面微观结构。退火导致在Cu和Al_2O_3之间的界面处形成CuAlO_2反应相。

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