EMANATION THERMAL ANALYSIS FOR CHARACTERIZATION OF SURFACE AND NEAR SURFACE LAYERS OF ADVANCED MATERIALS

机译：辐射热分析表征高级材料的表面和近表面层

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A non traditional method, called emanation thermal analysis (ETA),was used the for characterization of surface and near surface layers of SiC based materials .This method consists in the measurement of the release of inert gas( radon) from the samples previously labeled to the depth of several tens of nanometers with the inert gas atoms. The ETA results brought about information about microstructure changes and transport properties of SiC/SiC_f composites on heating in the range 30-1300℃ in argon and air, respectively. The annealing of structure irregularities which served as diffusion paths for radon was evaluated. The temperature range of the formation and crystallization of the silica layer resulting after oxidation of the SiC/SiC_f sample on heating in air was determined from the ETA results.

机译：一种非传统方法，称为放射热分析（ETA），用于表征SiC基材料的表面和近表面层。该方法包括测量先前标记为的样品中惰性气体（ra）的释放。带有惰性气体原子的数十纳米的深度。 ETA结果提供了有关SiC / SiC_f复合材料在氩气和空气中在30-1300℃加热时的微观结构变化和传输性能的信息。评价了作为irregular的扩散路径的结构不规则的退火。由ETA结果确定了SiC / SiC_f样品在空气中加热氧化后形成的二氧化硅层的形成和结晶的温度范围。

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来源
《The 3rd International Symposium on Material Chemistry in Nuclear Environment (Material Chemistry '02 MC'02) Mar 13-15, 2002 Tsukuba》|2002年|p.143-148|共6页
会议地点 Tsukuba(JP);Tsukuba(JP);Tsukuba(JP)
作者
V. Balek; T. Mitsuhashi; J.Subrt;
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作者单位

Nuclear Research Institute, CZ-250 68 Rez, Czech Republic;

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会议组织
原文格式 PDF
正文语种 eng
中图分类原子能技术;
关键词
emanation thermal analysis; radon; SiC/SiC_f; annealing; structure irregularities; near surface layers;

机译：发射热分析rad SiC / SiC_f退火结构不规则性近表层;

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EMANATION THERMAL ANALYSIS FOR CHARACTERIZATION OF SURFACE AND NEAR SURFACE LAYERS OF ADVANCED MATERIALS

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