首页> 外文会议>The 3rd International Symposium on Material Chemistry in Nuclear Environment (Material Chemistry '02 MC'02) Mar 13-15, 2002 Tsukuba >STUDY OF NANOPOROUS STRCUTURE OF SPUTTER-DEPOSITED SILICON OXIDE THIN FILMS BY POSITRON ANNIHILAITION SPECTROSCOPY IN RELATION TO GAS BARRIER COATING
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STUDY OF NANOPOROUS STRCUTURE OF SPUTTER-DEPOSITED SILICON OXIDE THIN FILMS BY POSITRON ANNIHILAITION SPECTROSCOPY IN RELATION TO GAS BARRIER COATING

机译:正电子NI散光谱法研究溅射沉积的氧化硅薄膜的纳米结构与气体壁垒涂层的关系

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摘要

Long-term radiation resistance of organic polymers in the presence of oxygen is strongly influenced by radiation-induced oxidation. We confirmed that the gas barrier coating of silicon oxide is able to effectively suppress radiation-induced oxidation of polypropylene and polyethylene. In the present work, nanoporos-ity of sputter-deposited silicon oxide films was studied by positron annihilation spectroscopy with a hope of gaining information pertinent to the development of high-performance gas barrier coating.
机译:有机聚合物在氧气存在下的长期抗辐射性受到辐射诱导的氧化的强烈影响。我们证实,氧化硅的气体阻隔涂层能够有效抑制辐射诱导的聚丙烯和聚乙烯的氧化。在目前的工作中,通过正电子an没光谱研究了溅射沉积的氧化硅膜的纳米孔隙率,希望获得与高性能阻气涂层的发展有关的信息。

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