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首页> 外文会议>3rd topical meeting on nuclear and emerging technologies for space 2009 >ELECTRONICS RADIATION HARDNESS TESTING OF POWER MOSFETS
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ELECTRONICS RADIATION HARDNESS TESTING OF POWER MOSFETS

机译：功率MOSFET的电子辐射硬度测试

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Commercial non-radiation hardened power MOSFETs manufactured by International Rectifier were exposed to a mixed neutron and gamma-ray radiation field in the rabbit facility of the Ohio State University Research Reactor (OSURR). The degradation in electrical performance of the MOSFETs was observed using I-V characterization. Key electrical performance parameters were extracted using least squares curve-fits to the experimental data and were used to model the MOSFETs in PSpice. Initially, the threshold voltage of the 100 V MOSFETs, part number IRF1310N, decreased sharply with ionizing dose, but then saturated at 1.5V after an ionizing dose of 0.5 Mrad (Si); whereas, the threshold voltage of the 500 V MOSFETs, part number IRF840, became negative after an ionizing dose in excess of 1 Mrad (Si). Although the drift region resistance of the 100 V MOSFET increased relatively little, the drift region resistance of the 500 V MOSFETs increased on average by nearly 300 %. This large increase in the drift region resistance of the 500 V MOSFETs is attributed to radiation-induced displacement damage and carrier-removal effects in the low-doped drift region. Furthermore, this increase in resistance may result in severe power losses and therefore reductions in energy efficiencies in the power converters of which these MOSFETs are a part.
机译：由国际整流器公司（International Rectifier）制造的商用非辐射硬化功率MOSFET在俄亥俄州立大学研究堆（OSURR）的兔子设施中暴露于混合的中子和伽马射线辐射场。使用I-V表征观察到MOSFET的电性能下降。使用对实验数据的最小二乘曲线拟合提取关键的电气性能参数，并将其用于对PSpice中的MOSFET进行建模。最初，部件号为IRF1310N的100 V MOSFET的阈值电压随电离剂量急剧下降，但在电离剂量为0.5 Mrad（Si）之后达到1.5V饱和；相反，电离剂量超过1 Mrad（Si）后，部件号为IRF840的500 V MOSFET的阈值电压变为负值。尽管100 V MOSFET的漂移区电阻增加相对较小，但500 V MOSFET的漂移区电阻平均增加了近300％。 500 V MOSFET的漂移区电阻的大幅增加归因于辐射引起的位移损伤和低掺杂漂移区中的载流子去除效应。此外，这种电阻的增加可能会导致严重的功率损耗，因此会降低这些MOSFET所组成的功率转换器中的能量效率。

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