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首页> 外文会议>4th International spacecraft propulsion conference >SILICON PRESSURE SENSOR FOR SPACE APPLICATIONS
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SILICON PRESSURE SENSOR FOR SPACE APPLICATIONS

机译：适用于空间应用的硅压力传感器

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摘要

A novel piezoresistive silicon pressure sensor has been developed for full-scale measurement from 20 bar to 350 bar for space propulsion applications. The silicon sensing element has a tubular design with an externally located diffused resistor bridge. The difference in stress in the transversal direction and the axial direction of the tube is proportional to pressure and is measured with the piezoresistive resistor bridge. The concept is favourable due to several key properties resulting from small dimensions and deflections, high material rigidity and a large output signal. The overload capability is typically several times the full-scale pressure, since applied pressure only generates compressive stress. The sensing element is fabricated by standard silicon planar technology and bulk micro machining processes, such as silicon fusion bonding and electrochemical etching. The resistor bridge is fabricated by ion implanted diffusions, and is electrically connected with a standard metal layer.
机译：已开发出一种新颖的压阻硅压力传感器，用于从20 bar到350 bar的满量程测量，用于空间推进应用。硅传感元件为管状设计，在外部具有扩散电阻桥。管子的横向和轴向应力差与压力成正比，并通过压阻电阻桥测量。由于小尺寸和挠曲，高材料刚度和大输出信号而产生的几个关键特性，使得该概念非常有用。过载能力通常是满量程压力的几倍，因为施加的压力只会产生压应力。传感元件是通过标准的硅平面技术和批量微机械加工工艺制造的，例如硅熔合和电化学蚀刻。电阻器桥通过离子注入扩散来制造，并且与标准金属层电连接。

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