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首页> 外文会议>2019 56th ACM/IEEE Design Automation Conference >Magma: A Monolithic 3D Vertical Heterogeneous Reram-Based Main Memory Architecture
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Magma: A Monolithic 3D Vertical Heterogeneous Reram-Based Main Memory Architecture

机译：岩浆：一种基于单片3D垂直异构异构Reram的主内存架构

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3D vertical ReRAM (3DV-ReRAM) emerges as one of the most promising alternatives to DRAM due to its good scalability beyond $10 nm$. Monolithic 3D (M3D) integration enables 3DV-ReRAM to improve its array area efficiency by stacking peripheral circuits underneath an array. A 3DV-ReRAM array has to be large enough to fully cover the peripheral circuits, but such large array size significantly increases its access latency. In this paper, we propose Magma, a M3D stacked heterogeneous ReRAM array architecture, for future main memory systems by stacking a large unipolar 3DVReRAM array on the top of a small bipolar 3DV-ReRAM array and peripheral circuits shared by two arrays. We further architect the small bipolar array as a direct-mapped cache for the main memory system. Compared to homogeneous ReRAMs, on average, Magma improves the system performance by 11.4%, reduces the system energy by 24.3% and obtains $>5-$year lifetime.CCS Concepts• Hardware $ightarrow 3mathrm {D}$ integrated circuits; Memory & storage;ACM Reference Format:Farzaneh Zokaee, Mingzhe Zhang, Xiaochun Ye, Dongrui Fan, and Lei Jiang. 2019. Magma: A Monolithic 3D Vertical Heterogeneous ReRAM-based Main Memory Architecture. In The 56th Annual Design Automation Conference2019 (DAC '19), June 2–6, 2019, Las Vegas, NV, USA. ACM, New York, NY, USA, 6 pages. https://doi.org/10.1145/3316781.3317858
机译：3D垂直ReRAM（3DV-ReRAM）由于具有超过10 nm $的良好可扩展性而成为DRAM的最有前途的替代品之一。单片3D（M3D）集成使3DV-ReRAM通过在阵列下方堆叠外围电路来提高其阵列面积效率。 3DV-ReRAM阵列必须足够大以完全覆盖外围电路，但是如此大的阵列大小会显着增加其访问延迟。在本文中，我们通过将大型单极3DVReRAM阵列堆叠在小型双极3DV-ReRAM阵列的顶部以及两个阵列共享的外围电路中，为未来的主存储系统提出了M3D堆叠异构ReRAM阵列架构。我们进一步将小型双极性阵列设计为主内存系统的直接映射缓存。与同类ReRAM相比，Magma平均将系统性能提高11.4％，将系统能耗降低24.3％，并获得$> $ 5年的使用寿命。CCSConcepts•硬件$ \\ rightarrow 3 \\ mathrm {D} $集成电路;内存和存储； ACM参考格式：Farzaneh Zokaee，张明哲，叶晓春，范东瑞和江雷。 2019年。岩浆：基于整体3D垂直异质ReRAM的主内存架构。在2019年6月2日至6日在美国内华达州拉斯维加斯举行的第56届年度设计自动化会议2019（DAC '19）上。 ACM，美国纽约，纽约，共6页。 https://doi.org/10.1145/3316781.3317858

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