A PROBE TECHNOLOGY FOR 110+ GHZ INTEGRATED CIRCUITS WITH ALUMINUM PADS

机译：110+ GHZ铝箔集成电路的探针技术

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Wafer probes for aluminum pads with 110GHz performance and low repeatable contact resistance are demonstrated. These probes are based on an existing membrane probe card technology that routinely achieves less than 0.2 ohms contact resistance in production environments. We demonstrate a ground-signal-ground (GSG) probe with less than 0.1 ohms contact resistance over 5000 contact cycles and less than 0.05 ohms variation during a 5-hour single-contact test interval, both on aluminum pads. 1.8dB maximum attenuation and 12dB minimum return losses at both the coaxial connector and the probe tips are achieved from 0 to 110GHz.

机译：展示了具有110GHz性能和低可重复接触电阻的铝垫晶圆探针。这些探针基于现有的膜探针卡技术，该技术通常在生产环境中实现小于0.2欧姆的接触电阻。我们展示了一个接地信号-接地（GSG）探针，在5000小时的接触循环中，接触电阻小于0.1欧姆，并且在5小时的单接触测试间隔中，两个接触片均在铝垫上变化，小于0.05欧姆。在0至110GHz范围内，同轴连接器和探头尖端的最大衰减为1.8dB，最小回波损耗为12dB。

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来源
《59th ARFTG (Automatic RF Techniques Group) Conference Digest, Jun 7, 2002, Seattle, Washington》|2002年|p.9.1-9.8|共8页
会议地点 Seattle WA(US)
作者
Amr M. E. Safwat; Mike Andrews; Leonard Hayden; K. Reed Gleason; Eric Strid;
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Cascade Microtech, Inc. 2430 NW 206th Avenue, Beaverton, OR 97006, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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A PROBE TECHNOLOGY FOR 110+ GHZ INTEGRATED CIRCUITS WITH ALUMINUM PADS

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