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首页> 外文会议>The 6th international conference on high strength low alloy steels. >Multi-pass simulation of heavy plate rolling including Intermediate Forced Cooling
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Multi-pass simulation of heavy plate rolling including Intermediate Forced Cooling

机译：包括中间强制冷却的厚板轧制的多道次模拟

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Thermomechanical Controlled Processing (TMCP) including accelerated cooling after the final hot rolling pass is a wellestablished technology, widely applied in HSLA steel plate production. However, there are still certain limitations, especially for thicker plate. The rolling schedule includes a long holding period (HP) after the roughing stage to allow the temperature to fall sufficiently for optimised TMCP during finishing. Intermediate Forced Cooling (IFC) applied during the HP can increase productivity by decreasing the required hold time, can restrict austenite grain growth, and can also improve the subsequent strain penetration in thick plate with further metallurgical benefits. Multi-pass plane strain compression (PSC) tests have been performed on the thermomechanical compression (TMC) machine at Sheffield University including different severities of IFC. Clearly it is impossible to simulate all aspects of the temperature and strain gradients present in thick plates in laboratory specimens, and most of the tests were conducted at temperatures and strains calculated by Finite Element modelling as relevant to specific positions through the plate thickness. However, some aspects of the gradients were addressed with tests using cold platens. The results have indeed shown that IFC can shorten the HP and reduce austenite grain growth and its variation across thick plate.
机译：在最终热轧道次之后包括加速冷却的热机械控制处理（TMCP）是一项成熟的技术，已广泛应用于HSLA钢板生产中。但是，仍然存在某些限制，特别是对于较厚的板。轧制计划包括在粗加工阶段之后的较长保持时间（HP），以使温度充分下降，从而在精轧过程中优化了TMCP。在HP期间应用的中间强制冷却（IFC）可以通过减少所需的保持时间来提高生产率，可以限制奥氏体的晶粒长大，并且还可以改善随后在厚板中的应变渗透，并具有进一步的冶金学优势。在谢菲尔德大学的热机械压缩（TMC）机器上进行了多遍平面应变压缩（PSC）测试，包括不同严重程度的IFC。显然，不可能模拟实验室样本中厚板中存在的温度和应变梯度的所有方面，并且大多数测试都是在通过有限元模型计算出的温度和应变上进行的，这些温度和应变与整个板厚的特定位置有关。但是，使用冷压板进行测试可以解决梯度的某些方面。结果确实表明，IFC可以缩短HP并减少奥氏体晶粒的生长及其在厚板上的变化。

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