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首页> 外文会议>7th International Conference on Electromagnetic Processing of Materials >Impact of the travelling magnetic field on the metallic impurities during the crystallization of photovoltaic silicon
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Impact of the travelling magnetic field on the metallic impurities during the crystallization of photovoltaic silicon

机译：光伏硅结晶过程中行进磁场对金属杂质的影响

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Silicon is the most extensively studied semiconductor mainly owing to its wide applicability in the photovoltaic solar cell industry.However the quality of Si photovoltaic cells depends on the purity of the material and on the grain structure of the ingot from which the wafers are cutting.The electrical performance of such materials,i.e.mainly their minority carrier lifetime,is closely related to metal impurities present in the feedstock or introduced during crystal growth.These impurities strongly interact with existing crystal defects to form complexes,accumulate at dislocations or grain boundaries in different forms,or even form silicide precipitates,which simultaneously contain several metal impurities.In such a context,it is necessary to control the segregation of impurities especially metallic in the grown ingot in order to optimize the cell properties as a function of the raw material purity.A new Bridgman set-up is developed in order to study the crystallization of photovoltaic Si under independently controlled solidification parameters: growth rate,thermal gradient,purity and convection.Convection,either natural or forced,plays a very important role during the crystallization.Its intensity and flow pattern affect heat and mass transfer and,consequently,macrostructure and segregation in a solidified ingot.Here the convection can be controlled by a travelling magnetic field in order to homogenize or segregate the rejected impurities such as metallic elements.The effects of the magnetic field intensity and frequency on the segregation and crystalline structure will be presented.
机译：硅是研究最广泛的半导体，这主要是由于其在光伏太阳能电池行业中的广泛应用。然而，硅光伏电池的质量取决于材料的纯度以及切割晶圆所用铸锭的晶粒结构。此类材料的电性能（主要是少数载流子寿命）与原料中存在的或晶体生长过程中引入的金属杂质密切相关。这些杂质与现有晶体缺陷强烈相互作用，形成复合物，以不同形式聚集在位错或晶界处在这种情况下，有必要控制生长锭中杂质特别是金属的偏析，以便根据原材料的纯度优化电池性能。为了研究光伏的结晶，开发了新的Bridgman装置硅在独立控制的凝固参数下：生长速率，热梯度，纯度和对流。自然对流或强制对流在结晶过程中起着非常重要的作用。其强度和流动方式会影响传热和传质，进而影响宏观结构和偏析在这里，可以通过行进磁场控制对流，以使被排斥的杂质（例如金属元素）均匀化或偏析，并将介绍磁场强度和频率对偏析和晶体结构的影响。

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