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NEW SCALING LAWS FOR SPACECRAFT DISCHARGE PULSES

机译:航天器排放脉冲的新尺度法

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The electrostatic discharge pulse waveform, current as a function of time, was investigated as many parameters were varied. Electron beams from 5 keV to 1.5 MeV and beam current densities from 1 pA/cm~2 to 2 nA/cm~2 were used to charge insulating samples. FR4 circuit boards, electrical connectors, Duroid boards, space-rated Teflon-insulated wiring, Kapton wiring, and epoxy fiberglass were irradiated, and the resulting pulses were recorded. The old scaling laws were found to result from the condition of very high static electric field inside the insulator, fields beyond those expected in space service. At realistic internal static field strength, the pulse amplitude is much less than that predicted by the old scaling laws. For reasonable fields, the pulses do not clearly scale with sample area, and instead, become constant at areas larger than a few square centimeters. Additionally, the "geometry" of the electric field in the vacuum also controls the pulse amplitude. A scaling law for pulse event rate now appears obtainable. A scaling law for the voltage and energy imparted to any load resistance is now available. Pulse rate and amplitude both increase with increasing internal electric field. Usually, small electrodes receive only a small part of the pulsed current, but under some conditions all of the discharge current will go to a small electrode. A new conceptual framework has evolved such that it may now be possible to measure the static field strength and radiation-charging rate inside the insulator material by measuring the pulse rate.
机译:随着许多参数的变化,研究了静电放电脉冲波形,电流与时间的关系。使用5 keV至1.5 MeV的电子束和1 pA / cm〜2至2 nA / cm〜2的束电流密度为绝缘样品充电。辐照FR4电路板,电连接器,Duroid板,额定空间的特氟龙绝缘布线,Kapton布线和环氧玻璃纤维,并记录产生的脉冲。发现旧的缩放定律是由绝缘子内部极高的静电场条件造成的,这些场强超出了太空服务中的预期范围。在实际的内部静电场强度下,脉冲幅度远小于旧的缩放定律所预测的幅度。对于合理的场,脉冲不会随样本面积明显变化,而是在大于几平方厘米的区域变得恒定。另外,真空中电场的“几何形状”也控制脉冲幅度。现在似乎可以获得脉冲事件发生率的比例定律。现在可以得到施加给任何负载电阻的电压和能量的缩放定律。脉冲频率和幅度都随着内部电场的增加而增加。通常,小电极仅接收一小部分脉冲电流,但是在某些条件下,所有放电电流都将流向小电极。一个新的概念框架已经发展到现在可以通过测量脉冲率来测量绝缘子材料内部的静态场强和辐射充电率。

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