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首页> 外文会议>8th China international nanoscience and technology symposium >Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering
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Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

机译：衬底温度对射频磁控溅射重掺杂Ga的ZnO透明导电膜性能的影响

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摘要

Gallium-doped zinc oxide (GZO) transparent conductive thin films were deposited on glass substrate by RF magnetron sputtering using a ceramic ZnO target with 10 wt. % Ga2O3 doped. The effects of substrate temperature on structural, electrical and optical properties of the films were investigated. X-ray diffraction (XRD) measurements indicated that GZO films were polycrystalline and strongly c-axis oriented. The surface roughness evaluated in terms of Rrms measured by atomic force microscope (AFM) was 1.8 nm for the smoothest surface obtained at 250 ℃. The electrical resistivity decreases with increasing substrate temperature and the lowest resistivity obtained was 5.8×10-4 Ω·cm at 350 ℃. The average transmittance in the visible region was over 90%. The carrier concentration increased with substrate temperature increasing, and the highest mobility value was 22.1 cm2v-1·s-1.
机译：掺杂镓的氧化锌（GZO）透明导电薄膜通过RF磁控溅射法，使用10 wt。％的陶瓷ZnO靶沉积在玻璃基板上。 Ga 2 O 3的掺杂百分比。研究了基材温度对薄膜结构，电学和光学性质的影响。 X射线衍射（XRD）测量表明，GZO膜是多晶的，并且c轴取向强。在250℃下获得的最光滑表面，通过原子力显微镜（AFM）测量的Rrms评估的表面粗糙度为1.8 nm。电阻率随衬底温度的升高而降低，在350℃下获得的最低电阻率为5.8×10-4Ω·cm。可见光区域的平均透射率超过90％。载流子浓度随着基板温度的升高而增加，最高迁移率值为22.1 cm2v-1·s-1。

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  • 来源
  • 会议地点 Xiangtan(CN);Xiangtan(CN)
  • 作者

    Shufang Wang; Xifeng Li; Jianhua Zhang;

  • 作者单位

    Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China School of Mechanical Electronic Engineering and Automation,ShanghaiUniversity,Shanghai 200072,China;

    Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China;

    Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China School of Mechanical Electronic Engineering and Automation,ShanghaiUniversity,Shanghai 200072,China;

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  • 正文语种 eng
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