Reverse annealing of boron doped polycrystalline silicon

著录项

• 来源
  《IMID/IDMC/ASIA DISPLAY 2008;International display manufacturing conference 2008;International meeting on information display;Asia display 2008》|2008年|p.264-267|共4页
• 会议地点 Ilsan(KR);Ilsan(KR);Ilsan(KR);Ilsan(KR)
• 作者

  Jung-Yoon Lim; Won-Eui Hong; Deok Hoi Kim; Tstomu Uemoto; Chi Woo Kim; Jae-Sang Ro;

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• 作者单位

  Dept. of Materials Science and Engineering, Hongik Univ. Seoul, 121-791, Korea;

  rnDept. of Materials Science and Engineering, Hongik Univ. Seoul, 121-791, Korea;

  rnLTPS Team, AMLCD Business, Samsung Electronics, Yongin-City, Gyeonggi-Do, 449-711, Korea;

  rnLTPS Team, AMLCD Business, Samsung Electronics, Yongin-City, Gyeonggi-Do, 449-711, Korea;

  rnLTPS Team, AMLCD Business, Samsung Electronics, Yongin-City, Gyeonggi-Do, 449-711, Korea;

  rnDept. of Materials Science and Engineering, Hongik Univ. Seoul, 121-791, Korea Phone: 82-2-320-1698, E-mail: jsang@wow.hongik.ac.kr;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 显示技术;显示设备、显示器;
• 关键词

  reverse annealing; ion implantation; activation;

  机译：反向退火离子注入激活;