Effect of deposition method of source/drain electrode on a top gate ZnO TFT Performance

机译：源/漏电极沉积方法对顶栅ZnO TFT性能的影响

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We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.

机译：我们已经研究了源/漏电极沉积方法对顶栅结构ZnO TFT性能的影响。使用ITO膜的S / D的TFT由双层组成，在初始阶段通过离子束辅助溅射沉积，然后通过DC磁控管溅射沉积，与仅使用DC磁控管溅射的ITO S / D相比，TFT具有更好的性能。。两张ITO膜表现出不同的晶粒形状，并导致不同的蚀刻性能。我们还怀疑，在ITO膜沉积过程中，玻璃基板（后沟道）上的电荷捕获可能会影响顶栅结构ZnO TFT的特性。

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来源
《IMID/IDMC/ASIA DISPLAY 2008;International display manufacturing conference 2008;International meeting on information display;Asia display 2008》|2008年|p.254-257|共4页
会议地点 Ilsan(KR);Ilsan(KR);Ilsan(KR);Ilsan(KR)
作者
Sang-Hee Ko Park; Chi-Sun Hwang; Shinhyuk Yang; Young Sun Yun; Byung Chang Park;
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作者单位

Transparent Electronics Team, ETRI, Daejeon, 305-350, Korea Phone:82-42-860-6276, E-mail: shkp@etri.re.kr;

rnTransparent Electronics Team, ETRI, Daejeon, 305-350, Korea;

rnTransparent Electronics Team, ETRI, Daejeon, 305-350, Korea;

rnPla-works, 1112-12 Namchon-Ri, Chungcheongbuk-Do, 369-911, Korea;

rnPla-works, 1112-12 Namchon-Ri, Chungcheongbuk-Do, 369-911, Korea;

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正文语种 eng
中图分类显示技术;显示设备、显示器;
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2. Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs With an Etch Stopper [J] . Mallory Mativenga, Farjana Haque, Jae Gwang Um, Electron Devices, IEEE Transactions on . 2020,第8期

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4. Effect of deposition method of source/drain electrode on a top gate ZnO TFT Performance [C] . International meeting on information display . 2008

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Effect of deposition method of source/drain electrode on a top gate ZnO TFT Performance

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