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首页> 外文会议>ACS Symposium Series 890; Symposium on Nanotechnology and the Environment: Applications and Implications; ; >Nanostructured Superlattice Thin-Film Thermoelectric Devices
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Nanostructured Superlattice Thin-Film Thermoelectric Devices

机译：纳米结构超晶格薄膜热电器件

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摘要

The transition from the high "intrinsic" ZT attainable in thin-film p-type Bi_2Te_3/Sb_2Te_3 and n-type Bi_2Te_3/Bi_2Te_(3-x)Se_x superlattice materials and the high "extrinsic" ZT attainable in their respective thermoelements to module-level performance is a huge engineering challenge. However, such a transition would enable a plethora of possibilities ranging from thermal management of hot spots in microprocessors to efficient thermal-to-electric power conversion devices. With the results presented here, both power and cooling thermoelectric devices with thin-film superlattice materials appear to be near-term potential realities. Some of the challenges that remain to be addressed in the full development of this nanoscale thermoelectric-materials technology include optimization of the various electrical and thermal interfaces both within the p-n couple and between the couple and the external thermal management components.
机译：从薄膜p型Bi_2Te_3 / Sb_2Te_3和n型Bi_2Te_3 / Bi_2Te_（3-x）Se_x超晶格材料中可获得的高“本征” ZT过渡到它们各自的热元件中的高“本征” ZT到模块-水平性能是一项巨大的工程挑战。然而，这种转变将使从微处理器中的热点的热管理到有效的热电转换装置的多种可能性成为可能。根据此处给出的结果，具有薄膜超晶格材料的电力和冷却热电设备似乎都是近期的潜在现实。在这种纳米级热电材料技术的全面发展中，仍需解决的一些挑战包括优化p-n耦合内以及耦合与外部热管理组件之间的各种电和热接口。

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