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首页> 外文会议>Active Materials: Behavior and Mechanics >Damping of Polycrystalline Ni-Mn-Ga, Bulk, PLD, and Sputtered Thin Film
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Damping of Polycrystalline Ni-Mn-Ga, Bulk, PLD, and Sputtered Thin Film

机译：多晶Ni-Mn-Ga，块状，PLD和溅射薄膜的阻尼

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摘要

Polycrystalline Ni-Mn-Ga in bulk, pulsed laser deposition (PLD) thin film, and radio frequency (RF) sputtered thin film are studied. A thin film of direct current (DC) magnetron sputter deposited NiTi was also used in the study. A polycrystalline Ni-Mn-Ga bulk sample was measured to have a tan δ = 0.4925 and a maximum elastic modulus E = 7.3 GPa. Material characterization studies were performed on polycrystalline Ni-Mn-Ga thin films deposited by PLD onto single crystal (100) Si and (100) MgO substrates at substrate temperatures ranging from 550℃ to 650℃. Damping measurements on RF sputter deposition of 1 μm Ni-Mn-Ga and 10 μm of NiTi both on copper substrates were performed in cantilever beam ring down tests. Results show 1 μm RF sputter deposited Ni-Mn-Ga thin film on a 54 μm copper substrate improves damping properties.
机译：研究了块状多晶Ni-Mn-Ga，脉冲激光沉积（PLD）薄膜和射频（RF）溅射薄膜。在研究中还使用了直流磁控溅射沉积NiTi薄膜。经测量，多晶Ni-Mn-Ga块状样品的tanδ= 0.4925，最大弹性模量E = 7.3 GPa。对通过PLD沉积在单晶（100）Si和（100）MgO衬底上的多晶Ni-Mn-Ga薄膜进行了材料表征研究，衬底温度为550℃至650℃。在悬臂梁衰荡测试中，对在铜基板上的1μmNi-Mn-Ga和10μmNiTi进行RF溅射沉积进行阻尼测量。结果表明，在54μm的铜基板上进行1μm的RF溅射沉积Ni-Mn-Ga薄膜可改善阻尼性能。

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