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首页> 外文会议>Advanced Focal Plane Arrays and Electronic Cameras II >Novel CMOS electron imaging sensor
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Novel CMOS electron imaging sensor

机译：新型CMOS电子成像传感器

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Abstract: Electron detector arrays are employed in numerous imaging applications, from low-light-light-level imaging to astronomy, electron microscopy, and nuclear instrumentation. The majority of these detectors are fabricated with dedicated processes, use the semiconductor as a stopping and detecting layer, and utilize CCD-type charge transfer and detection. We present a new detector, wherein electrons are stopped by an exposed metal layer, and are subsequently detected either through charge collection in a CCD-type well, or by a measurement of a potential drop across a capacitor which is discharged by these electrons. Spatial localization is achieved by use of two metal planes, one for protecting the underlying gate structures, and another, with metal pixel structures, for 2D detection. The new device does not suffer from semiconductor non-uniformities, and blooming effects are minimized. It is effective for electrons with energies of 2-6 keV. The unique structure makes it possible to achieve a high fill factor, and to incorporate on-chip processing. An imaging chip implementing several test structures incorporating the new detector has been fabricated using a 2 micron double-poly double-metal process, and tested inside a JEOL 640 electron microscope. !16
机译：摘要：电子探测器阵列已用于从低光水平成像到天文学，电子显微镜和核仪器的众多成像应用中。这些检测器中的大多数是通过专用工艺制造的，使用半导体作为停止和检测层，并利用CCD型电荷转移和检测。我们提出了一种新的检测器，其中电子被暴露的金属层阻止，然后通过在CCD型阱中收集电荷或通过测量由这些电子释放的电容器两端的电位降来检测电子。通过使用两个金属平面来实现空间定位，一个金属平面用于保护下面的栅极结构，另一个金属平面与金属像素结构一起用于2D检测。新器件不会遭受半导体不均匀的影响，并且将起霜效应降至最低。它对能量为2-6 keV的电子有效。独特的结构可以实现高填充系数，并结合片上处理。使用2微米双聚双金属工艺制造了采用几种结合了新检测器的测试结构的成像芯片，并在JEOL 640电子显微镜内部进行了测试。 ！16

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