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Characterization of chip size effect on the thermal-optical properties of GaN-based light emitting diodes

机译：表征芯片尺寸对GaN基发光二极管的热光学性能的影响

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摘要

The effect of chip size on the thermal-optical properties of GaN-based light emitting diodes was investigated. An increase in chip size was associated with a decrease of total series resistance due to enhancement of current spreading area. Consequently, the junction temperature linearly increased with an increase of the driving current, and the increase rate was slower for lager chip size. Moreover, we found out that the driving current and chip size affect the dominant emission wavelength shift that was understood to be a competition between blue shift behaviors of piezoelectricity-induced quantum confined stark effect and red shift behavior of self-heating effect. Thus, the operating current for color stabilization was increased with increasing chip size such as 80mA, 140mA and 160mA for 350x350μm~2, 600x600μm~2 and 1000x1000μm~2 chip sizes, respectively. Herein, the operating current for color stabilization was determined at the driving current, where blue shift of piezoelectricity-induced quantum confined stark effect became in balance with the temperature induced band gap shrinkage resulted from self-heating effect.
机译：研究了芯片尺寸对GaN基发光二极管热光学性能的影响。由于电流扩展面积的增加，芯片尺寸的增加与总串联电阻的减小有关。因此，结温度随驱动电流的增加而线性增加，而对于较大的芯片尺寸，增加速度较慢。此外，我们发现驱动电流和芯片尺寸会影响主要的发射波长偏移，这被理解为压电诱导的量子限制斯塔克效应的蓝移行为与自热效应的红移行为之间的竞争。因此，用于色彩稳定的工作电流随芯片尺寸的增加而增加，例如对于350x350μm〜2、600x600μm〜2和1000x1000μm〜2的芯片尺寸分别为80mA，140mA和160mA。在此，用于颜色稳定化的工作电流是在驱动电流下确定的，其中压电诱导的量子限制的斯塔克效应的蓝移变得与自热效应导致的温度引起的带隙收缩平衡。

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