The Effect of Processes on the Reliability of GaN Based Light Emitting Diodes

机译：工艺对GaN基发光二极管可靠性的影响

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According to our rich experiences on manufacturing of high reliability GaN based Light Emitting Diodes, we try to expatiate the relations between processes and device reliability on five aspects in this paper. In addition, we lay out some of our solutions on the five aspects and show our stable device.

机译：根据我们在制造高可靠性GaN基发光二极管方面的丰富经验，我们试图从五个方面阐述工艺与器件可靠性之间的关系。此外，我们在五个方面列出了一些解决方案，并展示了我们的稳定设备。

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来源
《Advanced LEDs for Solid State Lighting》|2006年|P.63550K.1-63550K.9|共9页
会议地点 Gwangju(KR)
作者
Zhiguo Xiao; Xiaoguang He; Kevin Ma; Xiangdong Chen; Shengli Wu; Zhijie Ke;
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作者单位

Dalian LUMING Science Technology Group CO., LTD., No.1.Gaoneng Street, Qixianling Industrial Base High-tech Zone, Dalian, China (116025);

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会议组织
原文格式 PDF
正文语种 eng
中图分类电气照明;
关键词
GaN; light emitting diodes; reliability;

机译：GaN;发光二极管;可靠性;

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专利

1. Sapphire Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes: Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting Diodes [J] . Natsuko Aota, Hideo Aida, Yutaka Kimura, Sensors and materials . 2014,第6期

机译：高性能基于GaN的发光二极管的蓝宝石衬底处理：蓝宝石衬底的微图案化及其对基于GaN的发光二极管中光增强的影响
2. Improvement of Reliability of GaN-Based Light-Emitting Diodes by Selective Wet Etching With p-GaN [J] . Ha G.-Y., Park T.-Y., Kim J.-Y., IEEE Photonics Technology Letters . 2007,第11期

机译：通过p-GaN选择性湿法刻蚀来提高GaN基发光二极管的可靠性
3. Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices [J] . 无中国物理：英文版 . 2010,第001期

机译：GaN基发光二极管晶片的表面处理对发光二极管器件漏电流的影响
4. The Effect of Processes on the Reliability of GaN Based Light Emitting Diodes [C] . Zhiguo Xiao, Xiaoguang He, Kevin Ma, Advanced LEDs for Solid State Lighting . 2006

机译：工艺对GaN基发光二极管可靠性的影响
5. Quantum efficiency enhancement for GaN based light-emitting diodes and vertical cavity surface-emitting lasers. [D] . Zhang, Fan. 2014

机译：GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
6. Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing [O] . Fang-I Lai, Jui-Fu Yang 2013

机译：通过在p-GaN表面图案化光子准晶体和n侧侧壁粗糙化来增强GaN基发光二极管的光输出功率
7. Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing [O] . 2013

机译：通过在p-GaN表面图案化光子准晶体和n侧侧壁粗糙化来增强GaN基发光二极管的光输出功率

The Effect of Processes on the Reliability of GaN Based Light Emitting Diodes

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