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Electronic chemical properties of vanadium doped TiO_2 for photocatalytic degradation of BTEX

机译：钒掺杂TiO_2对BTEX光催化降解的电子化学性质

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V-doped TiO_2 (V-TiO_2) was synthesised using solvothermal technique and immobilised onto fibreglass cloth (FGC). The XRD pattern of doped sample showed slight positive shift to higher angle indicating that the V ions were well substituted into the Ti lattices. The band-gap energy of V-TiO_2 was lower than that of P25, pure TiO_2, (3.28 eV for P25 and 2.90 eV for V-TiO_2) demonstrating it could be excited by visible light. The XANES spectra of the Ti K-edge transition indicated most Ti ions were in the tetravalent state with octahedral coordination. The A_2 species on the surfaces of V-TiO_2 were found to be the main active sites during photocatalytic degradation of BTEX under visible light irradiation.
机译：采用溶剂热技术合成了掺钒的TiO_2（V-TiO_2），并固定在玻璃纤维布（FGC）上。掺杂样品的XRD图谱显示出较高的角度略有正向偏移，表明V离子已很好地取代到Ti晶格中。 V-TiO_2的带隙能低于P25，纯TiO_2（P25为3.28 eV，V-TiO_2为2.90 eV），表明它可以被可见光激发。 Ti K边缘跃迁的XANES光谱表明，大多数Ti离子为四价态且具有八面体配位。发现V-TiO_2表面的A_2是可见光照射下BTEX光催化降解过程中的主要活性部位。

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