Characterization of the structural and electrical properties of ion beam sputtered ZnO films

著录项

• 来源
  《Advanced materials and nanotechnology》|2011年|p.49-52|共4页
• 会议地点 Wellington(NZ);Wellington(NZ)
• 作者

  Peter P. Murmu; John Kennedy; Ben J. Ruck; Andreas Markwitz;

  展开▼
• 作者单位

  National Isotope Centre, GNS Science, PO Box 31312, Lower Hutt, New Zealand,The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand,School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington, New Zealand;

  National Isotope Centre, GNS Science, PO Box 31312, Lower Hutt, New Zealand,The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand;

  The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand,School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington, New Zealand;

  National Isotope Centre, GNS Science, PO Box 31312, Lower Hutt, New Zealand,The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand;

  展开▼
• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 工程材料一般性问题;
• 关键词

  ZnO; ion beam sputtering; XRD, AFM; resistivity; carrier concentration;

  机译：氧化锌;离子束溅射XRD，AFM；电阻率载流子浓度;