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Thin films of cupric oxide: crystallite size and conduction mechanism analysis

机译：氧化铜薄膜：微晶尺寸和导电机理分析

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摘要

Nanocrystalline films of cupric oxide (CuO) produced by thermal oxidation have been characterised using x-ray analysis, SEM image analysis and temperature-dependent conduction measurements. We describe in detail the x-ray diffractometer calibration, paying particular attention to a function-fitting procedure which enables accurate subtraction of instrumental contributions to the sample diffractograms. The Scherrer and Williamson-Hall models are used to calculate crystallite size and sample strain and also give some indication of spatial inhomogeneity. Image analysis techniques which can discern individual 'grains' (the circular Hough transform and the ImageJ particle analyser) were used to evaluate the grain size distribution from SEM images. An average crystallite diameter of ~30 nm - determined by the ImageJ particle analyser - closely agrees with the various XRD analysis approaches. Electronic conduction in our samples is found to proceed via thermally activated transport, which we attribute to the presence of a well-defined trap state that lies ~0.2 eV from the valence band edge. The voltage-dependence of the activation energy additionally shows that the activation is a bulk effect and not due to Schottky barriers between the sample and the metal contact.
机译：通过X射线分析，SEM图像分析和与温度有关的传导测量，对通过热氧化生成的氧化铜（CuO）的纳米晶膜进行了表征。我们详细描述了X射线衍射仪的校准，尤其要注意功能拟合过程，该过程可以准确地减去仪器对样品衍射图的贡献。 Scherrer和Williamson-Hall模型用于计算微晶尺寸和样品应变，并提供一些空间不均匀性的指示。可以识别单个“晶粒”的图像分析技术（圆形霍夫变换和ImageJ颗粒分析仪）用于评估SEM图像的晶粒尺寸分布。由ImageJ粒子分析仪确定的〜30 nm的平均微晶直径与各种XRD分析方法非常吻合。我们发现样品中的电子传导是通过热活化传输进行的，这归因于存在一个清晰的陷阱态，该陷阱态离价带边缘约0.2 eV。活化能的电压依赖性还表明，活化是一种整体效应，而不是由于样品和金属触点之间的肖特基势垒引起的。

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  • 来源
  • 会议地点 Wellington(NZ);Wellington(NZ)
  • 作者

    Shrividya Ravi; Alan B. Kaiser; Christopher W. Bumby;

  • 作者单位

    The MacDiarmid Institute for Advanced Materials and Nanotechnology, SCPS, Victoria University of Wellington, Kelburn Parade, Wellington 6140, New Zealand;

    The MacDiarmid Institute for Advanced Materials and Nanotechnology, SCPS, Victoria University of Wellington, Kelburn Parade, Wellington 6140, New Zealand;

    The MacDiarmid Institute for Advanced Materials and Nanotechnology, SCPS, Victoria University of Wellington, Kelburn Parade, Wellington 6140, New Zealand,Industrial Research Ltd, 69 Gracefield Road, Lower Hutt 5040, New Zealand;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料一般性问题;
  • 关键词

    cupric oxide; XRD; SEM image analysis; conduction mechanisms;

    机译：氧化铜XRD; SEM图像分析；传导机制;

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