首页> 外文会议>Advanced materials and nanotechnology >Design parameters for a two-state nanomemory device
【24h】

Design parameters for a two-state nanomemory device

机译:两种状态的纳米存储器的设计参数

获取原文
获取原文并翻译 | 示例

摘要

In this study, we investigate the internal mechanics for a two-state memory device, comprising a charged metallofullerene which is located inside a closed carbon nanotube. Assuming the Lennard-Jones interaction energy and the continuum approximation, the metallofullerene has two symmetrically placed equal minimum energy positions. On one side the encapsulated metallofullerene represents the zero information state and by applying an external electrical field, the metallofullerene can be made to overcome the energy barrier of the nanotube, and pass from one end of the tube to the other, where the metallofullerene then represents the one information state.
机译:在这项研究中,我们研究了包含封闭金属碳纳米管内部带电金属富勒烯的两态存储设备的内部机制。假设Lennard-Jones相互作用能和连续近似,金属富勒烯具有两个对称放置的相等最小能量位置。一方面,被封装的金属富勒烯代表零信息状态,并且通过施加外部电场,可以使金属富勒烯克服纳米管的能垒,并从管的一端到达另一端,然后金属富勒烯代表一种信息状态。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号