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Progress towards photon counting between 1 μm and 1.6 μm using silicon with infra-red absorbers

机译：使用硅与红外吸收剂的光子计数在1μm和1.6μm之间的进展

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Silicon based avalanche photodiodes (APDs) have exhibited impressive performance over the visible spectrum for more than a decade. Photon counting with these devices has progressed to the level where room-temperature operation and low dark count rates (< 100 Hz) are commonplace. Several commercial enterprises have been established to capitalise on these devices and many niche markets are now serviced by incorporating these devices into suitable systems. This paper describes one approach that allows the performance of silicon based Geiger-mode avalanche photodiodes (GM-APDs) to be extended into the near-infra-red. The process development is described whereby Ge absorbers are incorporated into adapted silicon APD designs to provide separate absorption and multiplication devices. Simulation results are presented outlining the performance of these devices at wavelengths between 1 μm and 1.6 μm.rnThe performance results from silicon APD designs are presented for visible wavelengths. A silicon-germanium bonding process is described and the challenges presented in developing the hybrid absorber/multiplier structure are detailed. Finally, a summary of appropriate custom application integrated circuits for various applications is discussed.
机译：十多年来，硅基雪崩光电二极管（APD）在可见光谱上表现出令人印象深刻的性能。这些设备的光子计数已发展到室温操作和低暗计数率（<100 Hz）很常见的水平。已经建立了一些商业企业来利用这些设备，现在通过将这些设备合并到合适的系统中为许多细分市场提供服务。本文介绍了一种方法，该方法可以将基于硅的盖革模式雪崩光电二极管（GM-APD）的性能扩展到近红外。描述了该工艺的发展过程，其中将Ge吸收剂结合到合适的硅APD设计中以提供单独的吸收和倍增装置。给出了仿真结果，概述了这些器件在1μm至1.6μm波长之间的性能。rn给出了针对可见波长的硅APD设计的性能结果。描述了硅锗键合工艺，并详细介绍了开发混合吸收器/倍增器结构时遇到的挑战。最后，讨论了用于各种应用的适当的定制应用集成电路的摘要。

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