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Zero-dimensional states in nanostructures constricted by double-barrier heterojunctions and H-isolation

机译:双势垒异质结和H隔离限制了纳米结构的零维态

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Abstract: The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current- voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero- dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential. !24
机译:摘要:共振隧穿AlGaAs-GaAs双势垒异质结构的横向尺寸受到氢等离子体暴露的限制。通过在GaAs上固相外延生长Ge,可以形成与亚微米二极管的欧姆接触。电流-电压特性显示出精细的结构分裂,该分裂与二极管的横向尺寸成反比。结果被解释为通过AlGaAs势垒和谐波横向约束电势限制的量子盒中零维状态的共振隧穿。 !24

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