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首页> 外文会议>Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication >Structural and optical properties of strained In0.2Ga0.8As-GaAs quantum wells
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Structural and optical properties of strained In0.2Ga0.8As-GaAs quantum wells

机译：In0.2Ga0.8As-GaAs应变量子阱的结构和光学性质

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Abstract: We report on Molecular Beam Epitaxial growth and properties of strained In$-0.2$/Ga$-0.8$/As-GaAs quantum well (QW) structures suitable for 980 nm lasers. The QW width was maintained at 80 A and the barrier thickness was varied from 50 A to 300 A. The effects of increasing the barrier width on the structural and optical properties of the QW were examined using double crystal x-ray diffraction rocking scans (DCXRD) and photoluminescence measurements. DCXRD rocking scans revealed satellite peaks from the strained layer quantum wells (SLQW). The linewidth of the peaks decreased as the barrier width was increased. Optical measurements indicate significant improvements in the internal luminescence efficiency in the thick barrier structures. We assign the improvements in the luminescence properties to the reduction of non-radiative centers in the thick barrier structures. The sources of the non-radiative centers are ascribed to structural defects that are generated as a result of strain relaxation in the thin barrier structures. A new broad photoluminescence feature at 0.9 eV was also observed and believed to originate in the AlGaAs:Si cladding region. We shall present these results and discuss the implications of increasing the barrier thickness of In$-0.2$/Ga$-0.8$/As-GaAs QW on the performance of 980 nm lasers. !19
机译：摘要：我们报道了适用于980 nm激光器的In $ -0.2 $ / Ga $ -0.8 $ / As-GaAs量子阱（QW）结构的分子束外延生长和特性。 QW宽度保持在80 A，势垒厚度从50 A变为300A。使用双晶X射线衍射摇摆扫描（DCXRD）检查了增加势垒宽度对QW的结构和光学性能的影响）和光致发光测量。 DCXRD摇摆扫描显示了应变层量子阱（SLQW）的卫星峰值。峰的线宽随着势垒宽度的增加而减小。光学测量表明，厚阻挡层结构的内部发光效率有了显着提高。我们将发光性能的提高分配给厚壁垒结构中非辐射中心的减少。非辐射中心的来源归因于由于薄壁垒结构中的应变松弛而产生的结构缺陷。还观察到了0.9 eV处的新的宽泛光致发光特征，并认为其起源于AlGaAs：Si包层区域。我们将介绍这些结果，并讨论增加In $ -0.2 $ / Ga $ -0.8 $ / As-GaAs QW的势垒厚度对980 nm激光器性能的影响。 ！19

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