Ordered-disordered ternary III-V semiconductor alloys

机译：有序-无序三元III-V半导体合金

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Abstract: Ternary III - V semiconductor alloys show ordering specially when they grow lattice matched to a substrate. The ordered ternary alloys have different crystal structures and bandgaps from their corresponding disordered ones. We review the advantages of growing these ordered alloys. We also report on our efforts to grow the ordered alloys by the atomic layer epitaxy technique. !28

机译：摘要：三元III-V半导体合金在生长与基材匹配的晶格时特别有序。有序三元合金与其相应的无序合金具有不同的晶体结构和带隙。我们回顾了生长这些有序合金的优势。我们还报告了我们通过原子层外延技术生长有序合金的努力。！28

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《Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication》|1992年|p.48-53|共6页
会议地点 Somerset NJ(US)
作者
N.A. El-Masry; North Carolina State Univ.; Raleigh; NC; USA.;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. RAMAN-SCATTERING PROBE OF ANHARMONIC EFFECTS DUE TO TEMPERATURE AND COMPOSITIONAL DISORDER IN III-V BINARY AND TERNARY ALLOY SEMICONDUCTORS [J] . Ramkumar C., Abbi SC., Jain KP. Physical Review, B. Condensed Matter . 1996,第20期

机译：III-V二元和三元合金半导体中温度和成分紊乱引起的氨性效应的拉曼散射探针
2. Implementation of ∑Δ ADC using electrically doped III-V ternary alloy semiconductor nano-wire TFET [J] . Rajan Chithraja, Patel Jyoti, Sharma Dheeraj, Micro & nano letters . 2020,第4期

机译：使用电掺杂III-V三元合金半导体纳米线TFET的ΣΔADC的实现
3. Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys [J] . Alla Srivani, Vedam Ram Murthy, G. Veera Raghavaiah International Journal of Physical Sciences . 2014,第12期

机译：AlxGa1-xAs III-V砷化物三元半导体合金的物理性能研究
4. Ordered-disordered ternary III-V semiconductor alloys [C] . N.A. El-Masry Conference on advanced semiconductor epitzxial growth processses and lateral and vertical fabrication . 1992

机译：有序无序的三元III-V半导体合金
5. Semiconductor Nanofabrication via Metal-Assisted Chemical Etching: Ternary III-V Alloys and Alternative Catalysts [D] . Wilhelm, Thomas S. 2019

机译：半导体纳米制剂通过金属辅助化学蚀刻：三元III-V合金和替代催化剂
6. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors [O] . Osmar FP dos Santos, Sara CP Rodrigues, Guilherme M Sipahi, 2011

机译：基于III-V族半导体的p型掺杂超晶格的垂直传输研究
7. Thermal conductivity of ternary III-V semiconductor alloys: The role of mass difference and long-range order [O] . Mei, S., Knezevic, I. 2017

机译：三元III-V半导体合金的导热系数：质量差异和远程秩序
8. Study of the Ideal-Vacancy-Induced Neutral Deep Levels in III-V Compound Semiconductors and their Ternary Alloys [R] . das Sarma, S., Madhukar, A. 1981

机译：III-V族化合物半导体及其三元合金中理想空位诱导的中性深能级研究

Ordered-disordered ternary III-V semiconductor alloys

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