EUV Resists Comprised of Main Group Organometallic Oligomeric Materials

机译：EUV抵抗主要的有机金属低聚物材料

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We present the synthesis and preliminary lithographic evaluation of Molecular Organometallic Resists for EUV (MORE) that contain post transition metals. These post transition metal nuclei have high EUV optical density so they can utilize a high fraction of the incident photons. We will describe two technical approaches for EUV resist platforms that contain bismuth. Approach 1: Combination of organometallic compounds with photoacid generators. Approach 2: Combination of high-oxidation state metal-center oligomers that utilize carboxylate anions bound to the metal centers.

机译：我们介绍了含有后过渡金属的EUV（MORE）分子有机金属抗蚀剂的合成和初步光刻评估。这些过渡金属核具有很高的EUV光密度，因此它们可以利用大部分入射光子。我们将描述包含铋的EUV抗蚀剂平台的两种技术方法。方法1：将有机金属化合物与光致产酸剂组合。方法2：利用结合到金属中心的羧酸根阴离子的高氧化态金属中心低聚物的组合。

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《Advances in Patterning Materials and Processes XXXI》|2014年|90512A.1-90512A.9|共9页
会议地点 San Jose CA(US)
作者
James Passarelli; Brian Cardineau; Ryan Del Re; Miriam Sortland; Michaela Vockenhuber; Yasin Ekinci; Chandra Sarma; Mark Neisser; Daniel A. Freedman; Robert L. Brainard;
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College of Nanoscale Science and Engineering, Albany, NY 12033;

College of Nanoscale Science and Engineering, Albany, NY 12033;

College of Nanoscale Science and Engineering, Albany, NY 12033;

College of Nanoscale Science and Engineering, Albany, NY 12033;

Paul Scherrer Institut, Villigen, Switzerland;

Paul Scherrer Institut, Villigen, Switzerland;

SEMATECH, Albany NY 12033;

SEMATECH, Albany NY 12033;

Slate University of New York at New Paltz, New Paltz, NY 12561;

College of Nanoscale Science and Engineering, Albany, NY 12033;

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专利

1. Main-chain organometallic polymers comprising redox-active iron(II) centers connected by ditopic N-heterocyclic carbenes [J] . Mercs L, Neels A, Stoeckli-Evans H, Dalton transactions: An international journal of inorganic chemistry . 2009,第35期

机译：包含通过对位N-杂环卡宾连接的氧化还原活性铁（II）中心的主链有机金属聚合物
2. The effect of direct PAG incorporation into the polymer main chain on reactive ion etch resistance of 193 nm and EUV chemically amplified resists [J] . Cheng-Tsung Lee, Clifford L. Henderson, Mingxing Wang, Microelectronic Engineering . 2008,第5a6期

机译：直接将PAG掺入聚合物主链中对193 nm反应性离子刻蚀性和EUV化学放大抗蚀剂的影响
3. Higher Sensitive Extreme Ultraviolet (EUV) Resist Materials Derived From p-t-Butylcalix[n]arenes (n = 4 and 8) [J] . Hiroyuki Maekawa, Hiroto Kudo, Takeo Watanabe, Journal of Photopolymer Science and Technology . 2020,第1期

机译：对叔丁基杯[n]芳烃衍生的高灵敏度的极紫外（EUV）材料（n = 4和8）
4. Novel EUV resist materials for 16 nm half pitch and EUV resist defects [C] . Motohiro Shiratani, Takehiko Naruoka, Ken Maruyama, Conference on extreme ultraviolet lithography V . 2014

机译：新型的EUV抗蚀剂材料可实现16 nm半间距和EUV抗蚀剂缺陷
5. Fluidic sensor devices utilizing dry film resist as main structural materials [D] . Gong, Sijia. 2013

机译：利用干膜抗蚀剂作为主要结构材料的流体传感器装置
6. High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results [O] . Theodore Manouras, Panagiotis Argitis 2020

机译：高敏感性抗蚀性对EUV光刻进行抗衡性：材料设计策略和绩效结果综述
7. High-sensitivity molecular organometallic resist for EUV (MORE) [O] . James Passarelli, Michael Murphy, Ryan Del Re, 2015

机译：EUV（更多）的高敏感性分子有机金属抗蚀剂
8. Critical Challenges for EUV Resist Materials. [R] . Naulleau, P. P., Anderson, C. N., Baclea-an, L. M., 2011

机译：EUV抗蚀剂材料的关键挑战。

EUV Resists Comprised of Main Group Organometallic Oligomeric Materials

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