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TXRF FOR SEMICONDUCTOR APPLICATIONS

机译：适用于半导体应用的TXRF

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摘要

This paper discusses the application of TXRF for semiconductor process characterization. The depth profile of the analyte element plays a critical role in accurate determination by TXRF. In order to achieve reliable quantification, a method for preparing standard and crosscheck samples, named "Immersion in Alkaline Hydrogen Peroxide Solution (IAP)," is proposed. The method offers a good level of reproducibility of depth profiles as well as areal and in-batch uniformity. Certain improvements of TXRF instruments are also discussed. The purity of the background spectra is critical in ultra-trace analysis, and improvements in instrumentation such as Au-L(3 excitation, a dual multilayer monochromator, and an x-y-θ stage actually reduced the background to help enable the identification of trace elements. We tested the performance of the recently improved TXRF instruments on IAP wafers intentionally contaminated with trace Cu, and demonstrated that a real-10~9 atoms cm~(-2) analysis can actually be achieved.
机译：本文讨论了TXRF在半导体工艺表征中的应用。分析物元素的深度曲线在TXRF的准确测定中起着至关重要的作用。为了实现可靠的定量，提出了一种用于制备标准样品和对照样品的方法，称为“浸入碱性过氧化氢溶液（IAP）”。该方法提供了深度剖面的良好可再现性水平，以及面和批次内的均匀性。还讨论了TXRF仪器的某些改进。背景光谱的纯度在超痕量分析中至关重要，而仪器的改进（例如Au-L（3激发，双层单色仪和xy-θ载物台）实际上减少了背景，有助于识别痕量元素我们在故意被痕量铜污染的IAP晶片上测试了最近改进的TXRF仪器的性能，并证明实际上可以实现10〜9个原子cm〜（-2）的分析。

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  • 来源
    《Advances in X-ray analysis (ICDD2001)》|2001年|p.523-532|共10页
  • 会议地点 Steamboat Springs CO(US);Steamboat Springs CO(US);Steamboat Springs CO(US)
  • 作者

    Yoshihiro Mori;

  • 作者单位

    Advanced Technology Research Laboratories, Nippon Steel Corporation c/o Wacker-NSCE Corporation, 3434 Shimata, Hikari, Yamaguchi 743-0063, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 X射线、紫外线、红外线;
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