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首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.1 >Studies on Immersion Defects using Mimic Immersion Experiments
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Studies on Immersion Defects using Mimic Immersion Experiments

机译：使用模拟浸入实验研究浸入缺陷

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Top coat process is required for immersion lithography in order to prevent both the chemical contamination of scanner optics with eluted chemicals from resist material and the formation of residual droplet under the immersion exposure with high scanning speed. However, defect density of ArF immersion lithography with alkaline developer soluble type top coat material is much higher than that of ArF dry lithography. Mimic immersion experiments comprised of soaking of exposed conventional dry ArF resist with purified water followed by drying step were performed in order to study the immersion specific defects. It was suggested that the origin of immersion specific defects with alkaline developer soluble type top coat was the remaining water on and in the permeable top coat layer that might interfere the desired deprotection reaction of resist during post exposure bake (PEB). Therefore, application of post exposure rinse process that can eliminate the impact of the residual micro water droplets before PEB is indispensable for defect reduction. Post exposure rinse with optimized purified water dispense sequence was noticed to be valid for defect reduction in mimic immersion lithography, probably in actual immersion lithography.
机译：浸没式光刻需要进行表面涂层处理，以防止扫描光学系统受到来自抗蚀剂材料的洗脱化学物质的化学污染以及在以高扫描速度浸没曝光下形成残留液滴。然而，使用碱性显影剂可溶型面涂层材料的ArF浸没式光刻的缺陷密度远高于ArF干法光刻的缺陷密度。进行了模拟浸没实验，包括将裸露的传统干式ArF抗蚀剂用纯净水浸泡，然后进行干燥步骤，以研究特定的浸没缺陷。有人认为，碱性显影剂可溶型面漆的浸入特定缺陷的起因是在可渗透面漆层上和之中残留的水，这可能会干扰后曝光烘烤（PEB）过程中所需的抗蚀剂脱保护反应。因此，在减少缺陷之前，必须采用可以消除残留的微水滴对PEB的影响的曝光后冲洗工艺。注意到用优化的纯净水分配顺序进行曝光后冲洗对于减少模拟浸没光刻中的缺陷是有效的，很可能在实际浸没光刻中。

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