Synthesis and Evaluation of Novel Resist Monomers and Copolymers for ArF Lithography

机译：用于ArF光刻的新型抗蚀剂单体和共聚物的合成与评价

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We report effects of methacrylates with polar group on resist performance determined by Quartz crystal microbalance (QCM) method. We found that high composition ratio of mevalonic lactone methacrylate accelerates dissolution of the resist film, which is suitable for high resolution resist. In addition, dissolution rate of the resist film depends on the structure of polar monomer. Also, a difference of swelling depending on the structure of polar monomer was observed in a low exposure dose. We think that the polymer polarity and acid dissociation energy of pendant group were influential to these phenomena. This information is also useful to develop new materials for ArF lithography.

机译：我们报告了具有极性基团的甲基丙烯酸酯对通过石英晶体微天平（QCM）方法确定的抗蚀剂性能的影响。我们发现，高比例的甲羟戊酸内酯甲基丙烯酸酯促进了抗蚀剂膜的溶解，这适用于高分辨率抗蚀剂。另外，抗蚀剂膜的溶解速度取决于极性单体的结构。另外，在低暴露剂量下观察到取决于极性单体的结构的溶胀差异。我们认为侧基的聚合物极性和酸离解能对这些现象有影响。该信息对于开发用于ArF光刻的新材料也很有用。

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来源
《Advances in Resist Technology and Processing XXIII pt.1》|2006年|P.61532A.1-61532A.8|共8页
会议地点 San JoseCA(US)
作者
Masahiko Kitayama; Ichihiro Aratani; Minoru Toriumi;
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作者单位

Kuraray Co., Ltd., Tainai, Niigata 959-2691, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类材料;
关键词
polar monomer; mevalonic lactone methacrylate (MLMA); quartz crystal microbalance (QCM); dissolution behavior; dissociation energy;

机译：极性单体;甲基丙烯酸马来酸内酯（MLMA）;石英晶体微量天平（QCM）;溶解行为;离解能;

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机译：浸没式光刻胶中含金刚烷的含氟嵌段共聚物的合成及评价
2. Synthesis and Evaluation of Adamantane-Containing Fluorinated Block Copolymers for Resist Modifiers in Immersion Lithography [J] . Miki Kanno, Atsushi Otake, Kousuke Tsuchiya, Journal of Photopolymer Science and Technology . 2011,第4期

机译：浸没式光刻胶中含金刚烷的含氟嵌段共聚物的合成及评价
3. Synthesis of copolymers containing 3-hydroxycyclohexyl methacrylate and their application as ArF excimer laser resists [J] . Jin-Baek Kim, Jae-Young Kim, Min-Ho Jung Polymer: The International Journal for the Science and Technology of Polymers . 1999,第1期

机译：含甲基丙烯酸3-羟基环己酯的共聚物的合成及其作为ArF准分子激光抗蚀剂的应用
4. Synthesis and Evaluation of Novel Resist Monomers and Copolymers for ArF Lithography [C] . Masahiko Kitayama, Ichihiro Aratani, Minoru Toriumi, Conference on Advances in Resist Technology and Processing . 2006

机译：新型抗蚀剂单体和ARF光刻共聚物的合成与评价
5. The design, synthesis, and evaluation of novel dendritic polymers as resist materials for next generation lithography. [D] . Tully, David Charles. 2001

机译：新型树枝状聚合物作为下一代光刻的抗蚀剂材料的设计，合成和评估。
6. Synthesis of Di-Block Copolymers Poly (Propylene oxide)-block-Poly (9-(23-epoxypropyl) Carbazole) via Sequential Addition of Monomers in One Pot [O] . Lorella Izzo, Paola Lisa, Olga Sacco, 2021

机译：通过连续添加一个罐中的单体合成二嵌段共聚物聚（环氧丙烷）聚（共环氧丙烷）聚（9-（23-环氧丙基）咔唑）
7. Synthesis and Evaluation of Adamantane-Containing Fluorinated Block Copolymers for Resist Modifers in Immersion Lithography [O] . Miki Kanno, Atsushi Otake, Kousuke Tsuchiya, 2011

机译：沉浸式光刻中抗蚀剂改性液的合成与评价抗蚀剂改性液的共聚物
8. Acid-Catalyzed Single-Layer Resists for ArF Lithography [R] . Kunz, R. R. 1993

机译：用于arF光刻的酸催化单层抗蚀剂

Synthesis and Evaluation of Novel Resist Monomers and Copolymers for ArF Lithography

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