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首页> 外文会议>Advances in Thin-Film Coatings for Optical Applications II >Correlation between mechanical stress and optical properties of SiO_2/Ta_2O_5 multilayer UV narrow-bandpass filters deposited by plasma ion-assisted deposition
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Correlation between mechanical stress and optical properties of SiO_2/Ta_2O_5 multilayer UV narrow-bandpass filters deposited by plasma ion-assisted deposition

机译：等离子体离子辅助沉积SiO_2 / Ta_2O_5多层紫外窄带滤光片的机械应力与光学性能的相关性

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Multilayer SiO_2/Ta_2O_5 UV narrow-bandpass filters were deposited by a plasma ion-assisted process. The optimized PIAD process leads to densified multilayer coatings with a stabilized build-in compressive stress and un-shifted center wavelength. The correlation between stress reduction and center wavelength upward shift was established via post-deposition annealing at temperature ranging from 120℃ to 500℃. Following 300℃ annealing, increased porosity and physical thickness of single layers of Ta_2O_5 and SiO_2 were observed, via EMA modeling of ellipsometric data acquired around the quasi-Brewster angle. This is consistent with AFM measurement. The CWL upward shift was attributed to the micro-structural changes originating from intrinsic stress relaxation. Good agreement between the calculated CWL shift based on single layer test, and measured total CWL shift of the UV NBF suggests that the multilayer interfacial coupling effects might be ignorable for CWL shift and stress calculations.
机译：采用等离子辅助工艺沉积了多层SiO_2 / Ta_2O_5紫外窄带滤光片。优化的PIAD工艺可产生具有稳定的内在压应力和中心波长不变的致密多层涂层。通过在120℃至500℃的温度下进行沉积后退火，建立了应力降低与中心波长上移之间的相关性。 300℃退火后，通过在准布鲁斯特角附近获得的椭偏数据的EMA模型，观察到Ta_2O_5和SiO_2单层的孔隙率和物理厚度增加。这与AFM测量一致。 CWL的上移归因于源自固有应力松弛的微观结构变化。基于单层试验计算的CWL位移与UV NBF的总CWL位移之间的良好一致性表明，多层界面耦合效应对于CWL位移和应力计算可能是可忽略的。

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