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首页> 外文会议>AMD-vol.257; American Society of Mechanical Engineers(ASME) International Mechanical Engineering Congress and Exposition; 20061105-10; Chicago,IL(US) >STATIC AND DYNAMIC TECHNIQUES FOR RESIDUAL STRESS MEASUREMENTS IN MICROELECTROMECHANICAL SYSTEMS
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STATIC AND DYNAMIC TECHNIQUES FOR RESIDUAL STRESS MEASUREMENTS IN MICROELECTROMECHANICAL SYSTEMS

机译：微机电系统中残余应力的静态和动态技术

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摘要

A major concern in the development of microelectromechanical systems (MEMS) is the presence of residual stress. Residual stress, which is produced during the fabrication of multi-layer thin-film structures, can significantly affect the performance of microscale devices. Though experimental measurement techniques are accurate, actual stress measurements can vary dramatically from run to run and wafer to wafer. For this reason, modeling of this stress is a challenging task. Past work has focused on experimental, static techniques for determining residual stress levels in single-layer and bi-layer structures. In this effort, two different experimental techniques are used for determining residual stress levels in four-layer piezoelectrically driven cantilever and clamped-clamped structures. One of the techniques is based on wafer bow measurements, and the other technique is a dynamic technique that is based on parameter identification from nonlinear frequency-response data. The devices studied, which consist of a piezoelectric layer or lead zirconate titanate (PZT) layer, are fabricated with varying lengths, widths, and material layer thickness. The results obtained from the static and dynamic techniques are compared and discussed.
机译：微机电系统（MEMS）的发展中主要关注的是残余应力的存在。在多层薄膜结构的制造过程中产生的残余应力会严重影响微型器件的性能。尽管实验测量技术是准确的，但实际应力的测量在每次运行和每次晶片之间都可能发生巨大变化。因此，对此应力进行建模是一项艰巨的任务。过去的工作集中于确定单层和双层结构中残余应力水平的实验性静态技术。在这项工作中，使用了两种不同的实验技术来确定四层压电驱动的悬臂式结构和夹紧结构中的残余应力水平。一种技术是基于晶圆弯曲度的测量，另一种技术是基于非线性频率响应数据的参数识别的动态技术。所研究的器件由压电层或锆钛酸铅（PZT）层组成，具有不同的长度，宽度和材料层厚度。比较和讨论了从静态和动态技术获得的结果。

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