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Modeling of Multi-species Transfer during Aluminum Nitride Vapor Growth

机译:氮化铝蒸气生长过程中多物种转移的建模

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摘要

AlN has attracted much attention in the past few years as a highly promising material for electronic and opto-electronic device applications. A halide vapor phase epitaxy (HVPE) system has been designed to grow high quality aluminum nitride layers at the growth rate up to 60 μm/h with the deposition temperature of 1000-1100℃ and the pressure ranging of 5.5-760 Torr. A 3-D numerical model that is capable of describing multi-component fluid flow, surface chemistry, conjugate heat transfer, and species transport has been developed to help in design and optimization of the epitaxy growth system. The effects of reactor pressure on heat transfer and reactive mixing process are studied. The effects of carrier gas (N_2+H_2) and reacting gas (AlCl_3+NH_3) flow rates on species mixing process and deposition uniformity have also been investigated. To achieve a uniform reactive species distribution above the substrate under a high carrier and reacting gases flow rate, a baffle is added in between the adduct boat and the substrate. Different baffle sizes, shapes and locations are tested to examine the optional conditions for the best uniformity.
机译:在过去的几年中,AlN作为一种非常有前途的电子和光电设备应用材料已经引起了广泛的关注。设计了卤化物气相外延(HVPE)系统,以最高60μm/ h的生长速度生长高质量的氮化铝层,沉积温度为1000-1100℃,压力范围为5.5-760 Torr。已经开发了能够描述多组分流体流动,表面化学,共轭传热和物种迁移的3-D数值模型,以帮助设计和优化外延生长系统。研究了反应堆压力对传热和反应混合过程的影响。还研究了载气(N_2 + H_2)和反应气(AlCl_3 + NH_3)的流量对物质混合过程和沉积均匀性的影响。为了在高载流子和反应气体流速下在衬底上方实现均匀的反应性物质分布,在加合物舟皿和衬底之间添加了挡板。测试了不同的挡板尺寸,形状和位置,以检查可选条件以获得最佳均匀性。

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